Non-contact C-V measurements of ultra thin dielectrics

Abnormal metal oxide formation induced by residual charging in plasma etch process

“…A schematic presentation of the apparatus for the commercial SPV metrology tool is shown in Fig. 6a [13]. Fig.…”

“…The thickness of the processed stack structures is observed by scanning electron microscopy (SEM). The quality of the contacts was examined by measuring the contact resistance and the surface photovoltage (SPV) spectrum of the etched tungsten plugs [12,13].…”

“…Points above 15 s have shown abnormal oxide formation on the W plugs. (a) The schematic presentation of the SPV probe from Semiconductor Diagnostic Inc [13],. and (b) average SPV potentials as a function of different de-chuck voltages.…”

Application of Non-contact Corona-Kelvin metrology for Characterization of Plasma Nitrided SiO[sub 2]

“…The high precision x,y stage then contact, preparation free electrical characterization that positions the test site underneath either the microis much faster and cost effective than previously used Kelvin probe or the micro-corona gun for the voltage MOS diagnostics [2,3]. Until recently, corona-Kelvin measurement or the corona charging, respectively.…”

“…For ultra-thin dielectrics this results in substantial leakage and causes voltage decay after corona charging. The effect of leakage was corrected by using a time-resolved technique involving the measurement of the voltage decay with time after each charging pulse [3]. In CET measurements the capacitance is determined by the slope of the charge-voltage curve, C meas = ∆Q/ ∆V, at a pre-defined voltage.…”