Non-classical CMOS device design

Trivedi,; Fossum,; Vandooren,

doi:10.1109/soi.2003.1242935

Cited by 11 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nonetheless, due to the cancellation of doping sensitivities on V FB (or ms ) and ψ S(inv) (∼2φ B ) from the sum of the two components of (2) (see the inset in figure 6), the impact of the ms variation on V T is minimal. This result agrees with the projection reported earlier for undoped devices with random doping impurities [15]. The doping independence further confirms the great advantage of scaling DG MOSFETs, that they will be immune to doping/impurity variation, which is essentially unavoidable in such a small geometry.…”

Section: Advanced Devicessupporting

confidence: 91%

“…where Q b = −qN A t Si , t Si is the silicon film thickness, ψ S(inv) is the surface potential at threshold and V T,QM is the V T increase due to quantum-mechanical effects, which can be approximated as a function of the ratio of the carrier effective mass in the direction of confinement to the free electron mass and silicon film thickness [15]. The Q b term of (2) would contribute the most impact of N A on V T .…”

Section: Advanced Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Threshold voltage sensitivity to doping density in extremely scaled MOSFETs

Chiang

Lin

2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The dependence of the threshold voltage (V T ) on channel doping for extremely scaled devices is investigated. This work is focused on the fundamental V T issue and its physical insight into the impact of the doping density on device characteristics. We find that the threshold voltage is, in fact, insensitive to doping over a wide range of doping density and such insensitivity is further extended by bandgap narrowing in nanoscale MOSFETs via analytical analyses and two-dimensional numerical device simulations (2003 Taurus-MEDICI User Guide (Mountain View, CA: Synopsis Inc.)). This result particularly suggests the scalability and feasibility of nanoscale double-gate MOSFETs.

show abstract

Section: Advanced Devicessupporting

confidence: 91%

Section: Advanced Devicesmentioning

confidence: 99%

Threshold voltage sensitivity to doping density in extremely scaled MOSFETs

Chiang

Lin

2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…An additional approximation E b s % 0, which is often invoked in the compact models of fully depleted [21] and dynamically depleted SOI MOSFETs [3,10,11], is not used here.…”

Section: Coupling Of the Front And Back Surface Potentialsmentioning

confidence: 99%