High-resolution electron microscopy, with the current resolution limits of better than 2A, has been proven to be a valuable technique for the study of radiation-resistant crystals, allowing the determination of the structures of perfect crystal regions, crystal defects and crystal surfaces with atomic resolution. As the resolution is improved, however, the image contrast is increasingly determined by dynamical diffraction effects and it is increasingly sensitive to the instrumental parameters and to the geometry and alignment of the specimen. For both the conventional transmission electron microscope and the scanning transmission electron microscope, further developments should lead to better or more versatile performance, up to the limits set by the fundamental problems of radiation damage. Major advances may be expected from developments of the associated techniques of microanalysis and microdiffraction. Applications of particular interest will include studies of surfaces and interfaces, small particles and radiationinduced chemical reactions.