Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias

Siprak, D.; Tiebout, M.; Zanolla, N.; Baumgartner, P.; Fiegna, Claudio

doi:10.1109/jssc.2009.2020246

Cited by 19 publications

(13 citation statements)

References 15 publications

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“…Simulation results are in accordance with data available in literature [2][3][4][5][6]9,12], indicating the validity of the proposed method. However, in order to quantitatively validate the proposed technique, experimental results are required not only to compare simulation results to measured data, but also to calibrate the trap density distribution.…”

Section: Discussionsupporting

confidence: 88%

“…2. The reduction is in accordance to the results obtained by [6], which achieved a noise reduction of about 10 dB at 1 Hz by applying FBB. Applying FBB behaves similarly to reducing the off-state voltage; it reduces the quasi Fermi level during the off-state, bringing the average quasi Fermi level closer to the middle of the silicon band gap, where the trap density is minimal, thus reducing the equivalent trap density and 1/f noise PSD.…”

Section: Nmos Invertersupporting

confidence: 91%

“…This behavior, which has been attributed to the distribution of traps in energy [4] has led to the proposition of noise reducing techniques, such as transistor switching [5] and the application of a forward body bias (FBB), also known as forward substrate bias (FSB), during the low transition of the input signal [6]. From a designers perspective, the development of compact models for noise simulation that account for these noise reducing techniques is crucial to properly simulate a circuit.…”

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confidence: 99%

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1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator

2014

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The purpose of this work is to propose a methodology to compute 1/f noise in MOS transistors under cyclostationary operation using the standard BSIM4 noise model. The proposed technique relies on a transient simulation, prior to the noise simulation, in which the average carrier quasi Fermi level in the channel is computed. Using this average quasi Fermi level and an energy distribution of traps, flicker noise parameters-NOIA, NOIB and NOIC-are recalculated in order to account for cyclo-stationary conditions. With these recalculated parameters, a noise simulation, using standard BSIM4 noise model, is performed. Simulation results are presented and compared to experimental data available in the literature, indicating the validity of the method.

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Section: Discussionsupporting

confidence: 88%

Section: Nmos Invertersupporting

confidence: 91%

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confidence: 99%

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1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator

2014

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“…RDF induce variability on electrical behavior that may be seen as time independent, while RTN induces fluctuations on electrical behavior which may change from one instant in time to the other [2][3][4][5][6]. These transient electrical behavior fluctuations may induce jitter in oscillators or transient failures in SRAMs [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…While the RTN effects have been discussed in length by various authors [2][3][4][5][6], both in conjecture with and without RDF, only few discuss them from a circuit application perspective [9][10][11]. None of them present a framework for circuit level simulation considering the RTN source and the circuit as a coupled system, considering the interplay between RTN sources and circuit bias points, and tracking simultaneously the evolution of both RTN and circuit bias points.…”

Section: Introductionmentioning

confidence: 99%

Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants

Wirth

Vasileska

Ashraf

et al. 2012

Microelectronics Reliability

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High‐performance low‐power 27‐GHz CMOS voltage‐controlled oscillator for Ka‐band applications

Yeh

Lin

Chang

2011

Micro & Optical Tech Letters

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Comparative analysis of edge-and broadside-coupled split ring resonators for metamaterial design-theory and experiments, IEEE Trans Microw A new 2D isotropic left-handed metamaterial design: Theory and experiment, Microw Opt Tech Lett 35 (2002), 405-408. 19. M.C. Velazquez-Ahumada, M.J. Freire, J.M. Algarin, and R. Marques, Demonstration of negative refraction of microwaves, Am J Phys, in press. 20. M. Converse, E.J. Bond, S.C. Hagness, and B.D. Van Veen, Ultrawide-band microwave space-time beamforming for hyperthermia treatment of breast cancer: A computational feasibility study, IEEE ABSTRACT: A new low-power 27.07-GHz voltage controlled oscillator is designed for Ka-band applications in this article. Body bias technique is used for the low-power and low-phase noise VCO design. The VCO can be tuned from 26.35 to 27.102 GHz. The measured phase noise is À106.2 dBc/Hz at 1 MHz offset from the carrier frequency. The corresponding figure-of-merit (FOM) is calculated to be À183.2 dBc/Hz. The VCO is implemented with the TSMC 0.18 lm one-poly-six-metal 1.5 V mixed signal/RF CMOS technology. The chip size is 0.565 Â 0.69 mm 2 .

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Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias

Cited by 19 publications

References 15 publications

1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator

1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator

Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants

High‐performance low‐power 27‐GHz CMOS voltage‐controlled oscillator for Ka‐band applications

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