Abstract:The low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized. The measured noise power spectrum shows a classical 1/f type. The noise amplitude is independent of source-drain current and inversely proportional to gate voltage. The extracted Hooge's constant of ZnO NW is found to be 6.52× 10 -3 . In addition, the low frequency noise of ZnO NW according to NW resistance and contact property are investigated. The noise amplitude is proporti… Show more
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