Noise performance of gallium arsenide field-effect transistors

Pucel, R.A.; Masse, D.; Krumm, C.F.

doi:10.1109/jssc.1976.1050711

Cited by 44 publications

(7 citation statements)

References 30 publications

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“…Below 8 GHz, the variations of NF min could then be attributed to a combined effect of a shot noise source, a generationrecombination (g-r) noise source, and the frequency dispersion of the transconductance and output conductance. Above 8 GHz NF min increases with frequency due to diffusion noise in the channel [14]. We measured a minimum noise figure and an associated gain around 0.8 dB and 14 dB at 10 GHz, respectively.…”

Section: Microwave Noise Characterizationmentioning

confidence: 76%

Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

Nsele

Escotte

Tartarin

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-µm HEMTs achieve a maximum current density of 700 mA/mm at V GS = 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits a minimum noise figure of 0.8 dB (1.8) dB with an associated power gain of 14 (8.8) dB. Below 8 GHz, the gate leakage current and a generation-recombination noise source with a very short time constant limit the noise performance.

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Section: Microwave Noise Characterizationmentioning

confidence: 76%

Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

Nsele

Escotte

Tartarin

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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“…As can be seen, the optimum noise bias occurs close to pinch off. versus drain current At this current, the contribution of the high field diffusion noise produced in the velocity saturated zone of the channel is minimised (2). However, at this drain current the device must still have a large transconductance/gate capacitance ratio and low parasitic resistances for thermal noise to be a minimum.…”

Section: Device Fabricationmentioning

confidence: 99%

Improvements in Low Noise Gallium Arsenide Fets for X-Band Applications

Butlin¹,

Parker²,

Waller³

et al. 1976

1976 6th European Microwave Conference

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“…However, the noise description of active devices at microwave frequency and beyond is less straightforward. As the term high frequency has moved toward hundreds of gigahertz, active devices have been at the core of this expansion, and new investigations have enhanced the understanding of their noise performance: Gallium arsenide‐based field effect transistors (FETs) have provided a modeling approach based on either fitting parameters or physical considerations . The merging of those two approaches has essentially occurred with the Pospieszalski's equivalent noise temperature model .…”

Section: Introductionmentioning

confidence: 99%

A novel theoretical analysis for the determination of the noise parameters applicable to millimeter‐wave frequencies (invited)

Boglione

2015

Int J Numerical Modelling

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This paper describes in detail a novel, fully analytical technique for the determination of high frequency noise parameters. The technique can be applied at any frequency of interest because the requirement of an external tuner is dropped. The absence of an input tuner removes the practical constraint of operational bandwidth of the system and opens the door to the direct evaluation of noise parameters of active devices in frequency ranges currently inaccessible. The mathematical formulation at the basis of the present technique is applied to the Pospieszalski noise model and is described in detail. The new technique provides an analytical tool to determine the equivalent noise temperatures T gs and T ds against measured data over a broad frequency range. Limitations and opportunities of the new technique are discussed including new insights into the Pospieszalski noise model. ' The requirement that Z S be 50 stems from the practical consideration that the characteristic impedance of typical microwave measurement systems is 50 . Therefore, Z S D 50 can be achieved without a source tuner. However, (17) is valid with any known value of Z S .

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Noise performance of gallium arsenide field-effect transistors

Cited by 44 publications

References 30 publications

Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

Improvements in Low Noise Gallium Arsenide Fets for X-Band Applications

A novel theoretical analysis for the determination of the noise parameters applicable to millimeter‐wave frequencies (invited)

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