Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

Abstract

The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-µm HEMTs achieve a maximum current density of 700 mA/mm at V GS = 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits a minimum noise figure of 0.8 dB (1.8) dB with an associated power gain of 14 (8.8) dB. Below 8 GHz, the gate leakage current and a generation-recombination noise source with a very short time constant limit the noise performance.

High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

“…Excellent microwave noise performance for AlGaN/GaN HEMTs on SiC [4]and Si substrates [5][6][7] have already been reported. Recently, few groups have also reported the microwave noise performances of InAlN/GaN HEMTs on SiC substrates [8][9][10]. At 10 GHz, Sun et al, reported a 0.1-µm-gate InAlN/GaN HEMT with NF min value of 0.62 dB but with an improved associated gain (G a ) of 15.4dB when compared to AlGaN/GaN HEMTs (G a =11.2dB) [6].…”

Improved microwave noise performance in 0.15µm AlGaN/AlN/GaN HEMTs on Silicon

“…Finally, the transmission line metal-stack Ti/Au (50/1000 nm) was formed and passivated with 420 nm-thick SiN by plasma enhance chemical vapour deposition. on SiC substrate [11]. Fig.…”

“…Another cause of high shot noise and thus higher noise figures of the device is due to the gate leakage as reported in [9][10][11]. To circumvent these adverse effects, we report a AlGaN/AlN/GaN HEMT on Si substrate with improved device structure design that enhances the microwave noise performance.…”

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

“…The value of NF min increases dramatically by about 0.05 dB when the value of V ds grows from 5 V to 6 V, as shown in Figure 17, and the increases in NF min with V ds are minimal for V ds >6 V. The changes in the carrier velocity in the channel cause the initial abrupt increase in NF min with V ds. 35 NF min rises due to a variety of causes, including an increase in I ds and power dissipation. 35 The carrier velocity reaches saturation when V ds rises over 5 V, and preconditioning variations in the carrier density are most likely to be responsible for the initial increase in NF min .…”