Noise Performance Evaluation of Uncooled Infrared Detectors (June 2009)

Oloomi, Hossein M.; Alam, Mohammad S.; Rana, Mukti M.

doi:10.1109/jsen.2010.2069559

Cited by 16 publications

(5 citation statements)

References 3 publications

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“…Here Vn is determined by [8]- [10] = √ 2 + ℎ 2 + 1/ 2 + 2 (2) where VJ, Vph, and V1/f are the Johnson, phonon (temperature fluctuations) and 1/f noise voltages of the bolometer, and Vamp is the input noise voltage of the amplifier. At present, the lowest value Vamp is 0.9 nV in a one hertz output bandwidth with a frequencies more than 200 Hz (for example LME49990, and ADA4898) for the uncooled precision ultralow noise operational amplifiers.…”

Section: Estimationsmentioning

confidence: 99%

“…The measurements showed that the 1/f noise voltage of the amplifier was higher than the V1/f value for the bolometers with a resistance of the resistive element less than 10 Ω. The NEP frequency dependence of the bolometers was determined as follows [10] Fig. 3 shows the sensitivity of the bolometers at the input of the amplification circuit (Δf = 1 Hz).…”

Section: Obtaining Of Bolometersmentioning

confidence: 99%

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Perspective Material and Applications of Uncooled Metal Bolometers

Vybornov

Andreev

2016

IEEE Sensors J.

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Abstract-A new method is proposed to compare the sensitivity of uncooled metal bolometers. This method allows us to conduct a comparative analysis for the sensitivity of uncooled bolometers with metal and metal alloy resistive elements. The experiments showed a twofold superiority in the sensitivity of the TiNi alloy based bolometer with a resistive element less than 10 Ω in resistance over the identical bolometers based on technologically applicable metals due to improved electrophysical properties. The Ti50.5Ni49.5 bolometer developed to measure the total solar radiation has a higher sensitivity, a higher measuring efficiency, a smaller weight and size compared to a serial CMP-11 pyranometer, as well as the best environmental protection. The highly sensitive uncooled metal bolometers are shown to be used as an integral part of the optical absorption gas analyzer to provide the control of background mercury vapors in the atmosphere.Index Terms-Bolometers, sensitivity, thin films, titanium alloys, power measurement, sensor systems and applications.

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Section: Estimationsmentioning

confidence: 99%

Section: Obtaining Of Bolometersmentioning

confidence: 99%

Perspective Material and Applications of Uncooled Metal Bolometers

Vybornov

Andreev

2016

IEEE Sensors J.

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“…3a), found in literature [16] consists of resistor (detector) and current source (bias), where ĭ(t) is radiation flux, I bias (t) is bias current, V out (t) is output voltage [17]. However, model presented in Fig.…”

Section: A Simple Circuit Modelmentioning

confidence: 99%

A study on microbolometer electro-thermal circuit modelling

Nazdrowicz

Szermer

Maj

et al. 2015

2015 22nd International Conference Mixed Design of Integrated Circuits &Amp; Systems (MIXDES)

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Electro-thermal models are commonly used in simulations and designing MEMS devices, also in case of microbolometers. These models allow to estimate sensors performance before fabrication that consequently impacts on fabrication cost. Coupling of electric and thermal domains and building appropriate model for carrying out simulations are crucial to detect all phenomena having impact for Readout Integrated Circuit. This article brings closer to the subject matter of circuit modelling (willingly implemented in MATLAB/SIMULINK or PSPICE tools) and to its theoretical background.

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“…Nowadays, the thermosensitive devices in most mass-produced uncooled FPAs [6,7] are vanadium oxide (VOx) [8][9][10] or amorphous silicon (α-Si) microbolometers [11][12][13][14]. Although the VOx/α-Si microbolometers dominate the commercial market due to their high sensitivity [15,16], the complex fabrication process of these bolometers based on microelectromechanical systems (MEMS) and the need for specific production lines limit their large-scale use in the civilian field.…”

Section: Introductionmentioning

confidence: 99%

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

Guo

Jiang

et al. 2022

Micromachines

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Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 ´ 109 cmHz1/2/W at 25 μA and a maximum of 6.2 ´ 108 cmHz1/2/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption.

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Noise Performance Evaluation of Uncooled Infrared Detectors (June 2009)

Cited by 16 publications

References 3 publications

Perspective Material and Applications of Uncooled Metal Bolometers

Perspective Material and Applications of Uncooled Metal Bolometers

A study on microbolometer electro-thermal circuit modelling

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

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