Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

Guo, Yaozu; Ma, Haolan; Jiang, Lan; Liao, Yulin; Ji, Xiaoli

doi:10.3390/mi13111869

Cited by 5 publications

(3 citation statements)

References 29 publications

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“…MEMS RF switches have been also commercially produced by IHP foundry services [22], [23]. CMOS-MEMS mixers [24], filters [25], highly-sensitive mass sensors [26], general-purpose resonators [27] and microbolometers [28] have also been reported. If we expand the concept of BEOL CMOS-MEMS to manufacturing processes requiring additional deposition of sensitive materials, a wider range of sensors can be designed.…”

Section: Introductionmentioning

confidence: 99%

Monolithic Sensor Integration in CMOS Technologies

Fernandez¹,

Michalik²,

Valle

et al. 2023

IEEE Sensors J.

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Besides being mainstream for mixed-signal electronics, CMOS technology can be used to integrate MEMS on a single die, taking advantage of the structures and materials available in feature sizes around 180 nm. In this article, we demonstrate that the CMOS Back End Of Line (BEOL) layers can be postprocessed and be opportunistically used to create several kinds of MEMS sensors exhibiting good or even excellent performance, such as accelerometers, pressure sensors and magnetometers. Despite the limitations of the available mechanical and material properties in CMOS technology, thanks to monolithic integration, these are compensated by the significant reduction of parasitics and system size. Furthermore, this work opens the path to create monolithic integrated multi-sensor (and even actuator) chips, including data fusion and intelligent processing.

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Section: Introductionmentioning

confidence: 99%

Monolithic Sensor Integration in CMOS Technologies

Fernandez¹,

Michalik²,

Valle

et al. 2023

IEEE Sensors J.

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“…Various micro components [ 29 , 30 , 31 , 32 , 33 ] and devices [ 34 , 35 , 36 , 37 , 38 ] are manufactured employing the CMOS process. Micro MFSs developed by this process have many benefits [ 27 , 28 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Measurement of Microelectromechanical Three-Axis Magnetic Field Sensors Based on the CMOS Technique

Hsu

Tsai

et al. 2023

Micromachines

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The design, fabrication, and measurement of a microelectromechanical system (MEMS) three-axis magnetic field sensor (MFS) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The MFS is a magnetic transistor type. The performance of the MFS was analyzed employing the semiconductor simulation software, Sentaurus TCAD. In order to decrease the cross-sensitivity of the three-axis MFS, the structure of the MFS is planed to accommodate two independent sensing components, a z-MFS utilized to sense magnetic field (M-F) in the z-direction and a y/x-MFS composed of a y-MFS and a x-MFS to be utilized to sense M-F in the y- and x-directions. The z-MFS incorporates four additional collectors to increase its sensitivity. The commercial 1P6M 0.18 μm CMOS process of the Taiwan Semiconductor Manufacturing Company (TSMC) is utilized to manufacture the MFS. Experiments depict that the MFS has a low cross-sensitivity of less than 3%. The sensitivities of z-, y-, and x-MFS are 237 mV/T, 485 mV/T, and 484 mV/T, respectively.

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“…Various microsensors [19][20][21][22][23], actuators [24][25][26][27][28][29], and devices [30][31][32][33][34] have been fabricated using the CMOS-MEMS technique. Photovoltaic microgenerators created through this technique offer improved efficiency, compactness, versatility, and cost-effectiveness, making them well-suited for a wide range of applications [35][36][37][38][39], including self-powered sensors, wearable devices, and internet of things (IoT).…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Photovoltaic Microgenerators Using the Complementary Metal Oxide Semiconductor Process

Chen,

Dai

2023

Micromachines

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This study develops a photovoltaic microgenerator based on the complementary metal oxide semiconductor (CMOS) process. The photovoltaic microgenerator converts the absorbed light energy into electrical energy using the photovoltaic effect. The material for the photovoltaic microgenerator is silicon, and its structure consists of patterned p–n junctions. The design of the photovoltaic microgenerator utilizes a grid-like shape, forming a large-area p–n junction with a patterned p-doping and N-well structure to enhance the photocurrent and improve the device’s performance. The photovoltaic microgenerator is fabricated employing the CMOS process with post-processing step. Post-processing is applied to enhance the microgenerator’s light absorption and energy-conversion efficiency. This involves using wet etching with buffered-oxide etch (BOE) to remove the silicon dioxide layer above the p–n junctions, allowing direct illumination of the p–n junctions. The area of the photovoltaic microgenerator is 0.79 mm2. The experimental results show that under an illumination intensity of 1000 W/m2, the photovoltaic microgenerator exhibits an open-circuit voltage of 0.53 V, a short-circuit current of 233 µA, a maximum output power of 99 µW, a fill factor of 0.8, and an energy-conversion efficiency of 12.5%.

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Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

Cited by 5 publications

References 29 publications

Monolithic Sensor Integration in CMOS Technologies

Monolithic Sensor Integration in CMOS Technologies

Design and Measurement of Microelectromechanical Three-Axis Magnetic Field Sensors Based on the CMOS Technique

Fabrication and Characterization of Photovoltaic Microgenerators Using the Complementary Metal Oxide Semiconductor Process

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