Noise performance and ionizing radiation tolerance of CMOS Monolithic Active Pixel Sensors using the 0.18μm CMOS process

Doering, D.; Baudot, J.; Deveaux, M.; Linnik, B.; Goffe, Mathieu; Senyukov, S.; Strohauer, Stefan; Stroth, J.; Winter, M.

doi:10.1088/1748-0221/9/05/c05051

Cited by 7 publications

(10 citation statements)

References 9 publications

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“…Therefore, the architecture is being migrated from the previously used 0.35 µm CMOS process to an intrinsically more radiation tolerant 0.18 µm process. First prototypes manufactured in this process tolerated up to ∼ 10 Mrad [8]. This fits our needs but remains to be reproduced with sensors hosting the full analog and digital read-out chain.…”

Section: Status Of the Sensor Randdmentioning

confidence: 85%

The Silicon Detector Systems of the Compressed Baryonic Matter (CBM) experiment at FAIR

Deveaux¹,

Heuser²

2014

Proceedings of 22nd International Workshop on Vertex Detectors — PoS(Vertex2013)

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The Compressed Baryonic Matter (CBM) experiment [1] is a fixed-target heavy-ion experiment that will operate at the international Facility for Antiproton and Ion Research (FAIR) [2] now under construction in Darmstadt, Germany. The experiment intends to study rare probes, which are emitted from heavy ion collisions with a beam energy of 4 to 45 AGeV. A focus is laid to the short lived open charm particles and to particles decaying into di-lepton pairs. Handling the up to 10 7 Au+Au collisions/s required for generating those probes with sufficient statistics, as much as reaching the required sensitivity for observing them, forms a major challenge for the silicon detectors of the experiment. We present the concept and the development status of two central detectors of CBM, the CMOS pixel based micro vertex detector (MVD) and the micro-strip detector based silicon tracking system (STS).

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Section: Status Of the Sensor Randdmentioning

confidence: 85%

The Silicon Detector Systems of the Compressed Baryonic Matter (CBM) experiment at FAIR

Deveaux¹,

Heuser²

2014

Proceedings of 22nd International Workshop on Vertex Detectors — PoS(Vertex2013)

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“…The tolerance of CPS to ionizing radiation depends signicantly on the specic design of the device. For imagers relying on simple pre-ampliers, a tolerance to ≳ 10 Mrad was observed [94]. Highly integrated sensors relying on clamping pixels were found to withstand 1.6 Mrad.…”

Section: Integrated Displacement Damage Caused By Heavy Ionsmentioning

confidence: 94%

“…Tab. 2 lists the results of a study on the impact of a modication of the width of the transistor gate of the SF-transistor in SB-pixels [94]. One observes that the average noise of the pixels increases slightly once the width of the transistor gate is reduced.…”

Section: Thermal Annealingmentioning

confidence: 99%

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Deveaux¹

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CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Unlike to most other silicon radiation detectors, they rely on standard CMOS technology. This cost efficient approach allows for building particularly small and thin pixels but also introduced, until recently, substantially constraints on the design of the sensors. The most important among them is the missing compatibility with the use of PMOS transistors and depleted charge collection diodes in the pixel. Traditional CPS were thus first of all suited for vertex detectors of relativistic heavy ion and particle physics experiments, which require highest tracking accuracy in combination with moderate time resolution and radiation tolerance. This work reviews the R&D on understanding and improving the radiation tolerance of traditional CPS with non- and partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. It introduces the specific measurement methods used to assess the radiation tolerance of those non-standard pixels. Moreover, it discusses the major mechanisms of radiation damage and procedures for radiation hardening, which allowed to extend the radiation tolerance of the devices by more than an order of magnitude.

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“…This reduces the overall performance of the device as CPS use typically a common threshold, which has to be set according to the noise of the most noisy pixels. It was shown, that increasing the surface of the transistor gate of the SF-transistor in SB-pixels alleviates the issue [91]. Increasing the gate surface of CPS manufactured in 0.18 µm technology was found to reduce the pixel noise decisively [16].…”

Section: Rts In Mosfet-transistorsmentioning

confidence: 99%

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Deveaux

2019

J. Inst.

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A: CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into 50 µm thin sensors, which provide an outstanding typical spatial resolution of few µm and a detection efficiency for minimum ionizing particles above 99.9%. The radiation tolerance of CPS was initially constrained by the limits of the CMOS processes used for their production but has been improved by orders of magnitudes during the last years.This work reviews the related R&D on the radiation tolerance of traditional CPS with partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. Procedures for assessing radiation damage in those non-standard pixels are discussed and the major mechanisms of radiation damage are introduced. Techniques for radiation hardening are shown. Moreover, recent results on next generation CPS featuring fully depleted sensors based on improved CMOS processes are summarized.

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Noise performance and ionizing radiation tolerance of CMOS Monolithic Active Pixel Sensors using the 0.18μm CMOS process

Cited by 7 publications

References 9 publications

The Silicon Detector Systems of the Compressed Baryonic Matter (CBM) experiment at FAIR

The Silicon Detector Systems of the Compressed Baryonic Matter (CBM) experiment at FAIR

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

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