Noise modeling in HgCdTe heterostructure devices

Abstract

Articles you may be interested inImproved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure A numerical method to analyze noise generation in semiconductor devices and based on ''transport equations for fluctuations'' is presented. The spectral intensity of temperature fluctuations, fluctuations of background illumination, fluctuations of thermal g -r processes ͑including Auger, radiative, and S-R mechanisms͒ as well as fluctuations of electron and hole mobility were taken into account. Noise spectra of midwavelength HgCdTe heterostructure photoconductors were measured over a wide temperature range, and the numerical model was fitted to these data. The results of the numerical model show the spatial distributions and the relative contributions of each source of fluctuation to the total noise measured in the devices.