Noise measurements of single electron transistors using a transimpedance amplifier

Starmark, B.; Delsing, Per; Haviland, David B.; Claeson, T.

doi:10.1016/s0964-1807(99)00051-4

Cited by 7 publications

(4 citation statements)

References 9 publications

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“…Finally, a new exciting field has been opened by the work of a Lucent Technologies group [110] who have managed 13 Another important trend is the integration of single-electron transistors with field-effect transistors providing the next amplification stage, and more importantly the matching of the very high output impedance of the SET to that of usual RF transmission lines. This allows the useful bandwidth of the single-electron transistor electrometers to be raised to tens of megahertz (see, e.g., [99], [103], [104]).…”

Section: A Supersensitive Electrometrymentioning

confidence: 99%

Single-electron devices and their applications

1999

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The goal of this paper is to review in brief the basic physics of single-electron devices, as well as their current and prospective applications. These devices, based on the controllable transfer of single electrons between small conducting "islands," have already enabled several important scientific experiments. Several other applications of analog single-electron devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.

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Section: A Supersensitive Electrometrymentioning

confidence: 99%

Single-electron devices and their applications

1999

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“…We used a transimpedance amplifier, described in detail earlier [23], for the measurements of the low frequency noise. It is sketched in fig.…”

Section: Noise Measurement Setupmentioning

confidence: 99%

Bias and temperature dependence of the noise in a single electron transistor

et al. 1999

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PACS 73.23Hk Coulomb blockade; single-electron tunneling. PACS 73.40Rw Metal-insulator-metal structures. AbstractA single electron transistor based on Al-AlOx-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range (1. . . 300) Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main noise contribution comes from fluctuations at the input of the transistor. Deviations from ideal input charge noise behaviour are found in the form of a bias dependence of the differential charge equivalent noise, i. e. the derivative of current noise with respect to gain. The temperature dependence of this effect could indicate that heating is activating the noise sources, and that they are located inside or in the near vicinity of the junctions.

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“…The broadband coaxial cable that carries the current from the SET to the measurement equipment at room temperature (RT) has a typical capacitance to ground ∼0.1 nF per metre, which shunts the parasitic capacitance of the SET and therefore reduces the bandwidth to tens of kilohertz [121]. A cryogenic transimpedance amplifier (TIA) could be used to avoid the issue by converting the current signal into voltage [122], however the TIA would need to be situated within millimetres of the SET, operating at mK temperatures [123,124] in order to reach MHz bandwidths. The challenge with this approach is designing an amplifier compatible with the limited cooling power available below 100 mK, typically on the order of 100 µW [125].…”

Section: The Setmentioning

confidence: 99%

Silicon spin qubits from laboratory to industry

Michielis

Ferraro

Prati

et al. 2023

J. Phys. D: Appl. Phys.

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Quantum computation is one of the most challenging quantum technologies that promise to revolutionize data computation in the long-term by outperforming the classical supercomputers in specific applications. Errors will hamper this quantum revolution if not sufficiently limited and corrected by quantum error correction codes thus avoiding quantum algorithm failures. In particular millions of highly-coherent qubits arranged in a two-dimensional array are required to implement the surface code, one of the most promising codes for quantum error correction. One of the most attractive technologies to fabricate such large number of almost identical high-quality devices is the well known metal-oxide-semiconductor (MOS) technology. Silicon quantum processor manufacturing can leverage the technological developments achieved in the last 50 years in the semiconductor industry. Here, we review modeling, fabrication aspects and experimental figures of merit of qubits defined in the spin degree of freedom of charge carriers confined in quantum dots and donors in silicon devices along with classical electronics innovations for qubit control and readout. Furthermore, we discuss potential applications of the technology and finally we review the role of start-ups and companies in the silicon-based quantum computing era.

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Noise measurements of single electron transistors using a transimpedance amplifier

Cited by 7 publications

References 9 publications

Single-electron devices and their applications

Single-electron devices and their applications

Bias and temperature dependence of the noise in a single electron transistor

Silicon spin qubits from laboratory to industry

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