Noise in avalanche transit-time devices

Guptā, Madhu

doi:10.1109/proc.1971.8524

Cited by 17 publications

(2 citation statements)

References 59 publications

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“…T h e breakdown voltage is 58. 3 V. An optimum efficiency of 25 percent was computed for VEF= 30 V and J d c = 500 A/cm2. The power and efficiency were observed to saturate at this voltage level because i t is just sufficient to make the trailing edge of the drifting charge pulse slow down due to the low electric field in the drift region at ut = 270 deg.…”

Section: ) Optimum Eficiency Of Silicon Diodesmentioning

confidence: 99%

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Nonlinear properties of IMPATT devices

Schroeder

Haddad

1973

Proc. IEEE

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153This means economical construction and the ability to fabricate displays with a large number of elements in a wide range of sizes and shapes. For nematic liquid-crystal displays the layer of liquid-crystal material must be uniformly thin. This creates difficulties in fabricating large-area displays.The liquid-crystal display has one important advantage.The switching power required is in the range 10-3 to lW2 W/cm2, making it very compatible with integrated driving circuits [4]. By comparison, the liquid-vapor display requires about 2 W/cm*. While this is much larger than the liquidcrystal requirement it is nevertheless competitive with other types of displays [SI, [9]-[13].Abstract-The basic principles of IMPATT diodes as microwave devices are reviewed and the current status of these devices concerning power output and e5ciency is given. The main purpose of this paper, however, is to discuss the nonlinear properties of these diodes which are useful in the design of amplifiers, oscillators, and other microwave devices. The main results of this paper are obtained from a digital computer analysis where an approximate, but realistic, diode model is employed. A detailed comparison of complementary silicon diodes as well as GaAs diodes concerning power output and efficiency is given. The effects of doping profile, current density, temperature, and material parameters on the performance of these devices have been investigated and are sammarized. Saturation effects which limit the efficiency and power output of these devices are described and optimum efficiencies which can be achieved for various doping profiles are given. A comparison between singlesided and double-drift diodes in both silicon and GaAs is also presented. The Editor.This inviled paper is one of a series planned on fopia of general infer&work was supported by the Air Force Systems Command's Rome Air

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Section: ) Optimum Eficiency Of Silicon Diodesmentioning

confidence: 99%

“…More detailed information on various aspects of avalanche-diode performance and state-of-the-art data may be found in several recent review articles [1]- [3]. I t has been found, both theoretically and experimentally, that avalanche diodes may be operated as microwave oscillators and amplifiers in several different modes.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear properties of IMPATT devices

Schroeder

Haddad

1973

Proc. IEEE

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Transit Time Devices

Roy

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are Impatt Diodes Impatt Structures and Doping Profiles Basic Principle of Generation of Microwaves in Impatt Diodes Small‐Signal Analysis Based on Analytical Approximation Computer Studies of the DC and Small‐Signal Properties of Impatt Diodes of any Doping Profile Small‐Signal Computer Analysis of Impatt Diodes Large‐Signal Analysis of Impatt Diodes DC‐to‐Microwave Conversion Efficiency Effect of Mobile Space Charge Double Avalanche Region Diode and Cancellation of Space Charge Effect Low–High–Low Diodes for Reduction of the Space Charge Effect and Constriction of the Avalanche Zone High‐Frequency Considerations Noise in Impatt Diodes Thermal Limitations and Heat Sink Millimeter‐Wave Impatt Diodes Pulsed Millimeter‐Wave Impatt Diode Frequency Chirp in Pulsed Impatt Oscillators GaAs and InP Impatt Diodes Heterojunction Impatt Diodes Control of Impatt Properties by Optical Illumination of the Active Area and by A Transverse Field in the Drift Region Trapatt Diode Baritt Diodes Acknowledgement

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The Elimination of Tuning-Induced Burnout and Bias-Circuit Oscillations in IMPATT Oscillators

Brackett¹

1973

Bell System Technical Journal

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Noise in avalanche transit-time devices

Cited by 17 publications

References 59 publications

Nonlinear properties of IMPATT devices

Nonlinear properties of IMPATT devices

Transit Time Devices

The Elimination of Tuning-Induced Burnout and Bias-Circuit Oscillations in IMPATT Oscillators

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