Noise characteristics of GaN-based IMPATTs

Modeling and comparative study on the high frequency and noise characteristics of different polytypes of SiC- based IMPATTs

“…A complete theoretical study of SiC IMPATT and MITATT (MIxed Avalanche Transit Time) devices accounting for all SiC features is of interest at this point to evaluate their potential and most promising designs in support of ongoing and future experimental attempts which has not been represented by any group till now (to the author's knowledge). Further, it is seen from [1,2] that high band gap semiconductors like GaN produces more noise compare to traditional IMPATTs. Hence, the noise analysis of all such poly structures is also important at this juncture to show the potentiality of SiC as the material of choice for IMPATTs.…”

“…In the modern trend, research activities are focused on the search of the best suited base semiconductor material, which would give high efficiency, high microwave power and low noise. Apart from low band gap semiconductor materials such as Si (IVth group elements) GaAs (III-Vth compound semiconductors) and its compound/alloy heterostructure material, wide band gap semiconductors like SiC, GaN and compounds based on it have recently been established as technologically important materials for both electronic and optoelectronic devices [1][2][3][4][5]. The feasibility of using GaN for IMPATT devices has been seen recently [1,2] in the literature.…”

“…Apart from low band gap semiconductor materials such as Si (IVth group elements) GaAs (III-Vth compound semiconductors) and its compound/alloy heterostructure material, wide band gap semiconductors like SiC, GaN and compounds based on it have recently been established as technologically important materials for both electronic and optoelectronic devices [1][2][3][4][5]. The feasibility of using GaN for IMPATT devices has been seen recently [1,2] in the literature. Some theoretical as well as experimental results on SiC-based IMPATTs are also seen recently in the literature [6,7].…”

“…The Impact Avalanche Transit Time (IMPATT) diodes are considered to be more powerful solid state sources operating in the mm-wave and sub-mm wave frequencies and are widely used in various communication systems [1][2]. In the modern trend, research activities are focused on the search of the best suited base semiconductor material, which would give high efficiency, high microwave power and low noise.…”

Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency

“…So, noise is an important aspect of the present study and the noise characteristics of the diode structure are also computed using the generalized noise simulation program [15]. The noise characteristics like mean square noise voltage per bandwidth (〈V 2 〉 / Δf ) and noise measure (NM) of the device are computed from this analysis.…”