Noise characterisation studies of amorphous semiconductors

Enhancement of mobility at low temperatures in amorphous silicon hydride

“…Since release of direct trapped carriers from D centres occurs outside the time range consided they therefore make no contibution to the transport over the first few I00 ns @ersch er a1 1983, Seynhaeve et ai 1989). The enhancement of the mobility associated with multiple trapping caused by the movement of E: to shallower energies as the temperature is lowered has rarely been considered as significant (Street 1984, Barclay and Boud 1991). Here, we examine the movement of E: which for all model density of states, N ( E ) , investigated below leads to an enhanced capture late into deep trapping centres and a reduction in carrier thermalization depth with temperature for the case.…”