No Mixing of Superconductivity and Antiferromagnetism in a High‐Temperature Superconductor.

Božović, I.; Логвенов, Г.; Verhoeven, M.A.J.; Caputo, P.; Goldobin, E.; Geballe, T. H.

doi:10.1002/chin.200331018

Cited by 10 publications

(15 citation statements)

References 1 publication

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“…In the bulk system, the phase separation and enhancement of charge susceptibility near the Mott insulator were first theoretically pointed out (21-23) and has long been debated (24)(25)(26)(27)(28)(29)(30)(31)(32)(33) in experiments and theories. Even in the simple Hubbard model on the square lattice, the exact solution is not available in terms of the existence of the phase separation and superconductivity (see Ref.…”

Section: Relation Between Intralayer and Interlayer Phase Separationsmentioning

confidence: 99%

Self-optimized superconductivity attainable by interlayer phase separation at cuprate interfaces

et al. 2016

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Section: Relation Between Intralayer and Interlayer Phase Separationsmentioning

confidence: 99%

Self-optimized superconductivity attainable by interlayer phase separation at cuprate interfaces

et al. 2016

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“…[7] As for all HTSC, the main structural and electronic unit is the Cu-O layer, where the superconductivity is believed to originate. [8] In contrast to most other HTSC, the Cu-O layer of Hg1201 is free of long-range structural distortions. The Ba atom serves as a spacer, defining to a large extent the planar Cu-O (1) distance, and the apical oxygen O(2) resides at a significantly larger distance from the Cu atom than in other HTSC materials.…”

mentioning

confidence: 99%

Demonstrating the model nature of the high-temperature superconductorHgBa2CuO4+δ

Barišić

Zhao

et al. 2008

Phys. Rev. B

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The compound HgBa 2 CuO 4+δ (Hg1201) exhibits a simple tetragonal crystal structure and the highest superconducting transition temperature (T c ) among all single Cu-O layer cuprates, with T c = 97 K (onset) at optimal doping. Due to a lack of sizable single crystals, experimental work on this very attractive system has been significantly limited. Thanks to a recent breakthrough in crystal growth, such crystals have now become available. [1] Here, we demonstrate that it is possible to identify suitable heat treatment conditions to systematically and uniformly tune the hole concentration of Hg1201 crystals over a wide range, from very underdoped (T c = 47 K, hole concentration p ~ 0.08) to overdoped (T c = 64 K, p ~ 0.22). We then present quantitative magnetic susceptibility and DC charge transport results that reveal the very high-quality nature of the studied crystals. Using XPS on cleaved samples, we furthermore demonstrate that it is possible to obtain large surfaces of good quality. These characterization measurements demonstrate that Hg1201 should be viewed as a model hightemperature superconductor, and they provide the foundation for extensive future experimental work.

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“…The fact that the critical temperature was not much different than what is observed in single layer LSCO films implies that the hole density in the CuO 2 plane next to the LCO was not much different either. Taken as a whole these experiments show that the high temperature superconductor phase and the antiferromagnetic insulator phase do not mix and that the interface between the two must be rather sharp 7 .…”

Section: Superlatticesmentioning

confidence: 76%

“…A number of these were made by growing a one unit cell thick barrier layer of La 2 CuO 4 between optimally doped La 1.85 Sr 0.15 CuO 4 electrodes, followed by patterning and contact deposition by standard microfabrication techniques. Remarkably, when the transport along the c-axis was measured, no supercurrent was observed 7 , even down to low temperature (4.2 K) and low bias (1 A) (Fig. 3a).…”

Section: Superlatticesmentioning

confidence: 93%

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Atomic-layer engineering of oxide superconductors

et al. 2012

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Molecular beam epitaxy technique has enabled synthesis of atomically smooth thin films, multilayers, and superlattices of cuprates and other complex oxides. Such heterostructures show high temperature superconductivity and enable novel experiments that probe the basic physics of this phenomenon. For example, it was established that high temperature superconductivity and anti-ferromagnetic phases separate on Ångström scale, while the pseudo-gap state apparently mixes with high temperature superconductivity over an anomalously large length scale (the "Giant Proximity Effect"). We review some recent experiments on such films and superlattices, including X-ray diffraction, atomic force microscopy, angle-resolved time of flight ion scattering and recoil spectroscopy, transport measurements, highresolution transmission electron microscopy, resonant X-ray scattering, low-energy muon spin resonance, and ultrafast photo-induced reflection high energy electron diffraction. The results include an unambiguous demonstration of strong coupling of in-plane charge excitations to out-of-plane lattice vibrations, a discovery of interface high temperature superconductivity that occurs in a single CuO 2 plane, evidence for local pairs, and establishing tight limits on the temperature range of superconducting fluctuations.Keywords: superconductivity, cuprates, interface, superlattice, field effect ATOMIC LAYER BY LAYER MOLECULAR BEAM EPITAXYTransition metal oxides have received a great deal of recent interest due to the wealth of electronic phases that can be observed in these materials, such as multiferroicity, high-temperature superconductivity (HTS), and high mobility electron gases 1 . The underlying cause of this variety of behaviors is the strongly correlated electrons that reside in the d-orbitals of these systems. At interfaces between two such oxides the competition between different states can lead to an even wider range of phenomena than is observed in the constituent materials alone 2 . A technical hurdle to studying these interesting oxide compounds and interfaces is that the synthesis of these chemically complex materials is typically not easily achieved. We overcome this problem by employing custom-built molecular beam epitaxy systems that allow for atomic-layer-by-layer synthesis with a high degree of control over film growth [3][4][5][6] . Molecular beam epitaxy (MBE) is an ultra-high vacuum technique for deposition of thin films, typically from resistively heated thermal evaporation sources (Knudsen cells) although electron-beam sources can be used as well for refractory materials. MBE sources can be shuttered and if the system is equipped with some monitoring tools that allow for an accurate control of absolute deposition rates of respective metals, one may achieve atomic-layer-by-layer (ALL) growth. The deposition process must be controlled very accurately, at the level of one percent of an atomic monolayer or better. The BNL molecular beam epitaxy system shown in Fig. 1 is equipped with sixteen sources, ...

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No Mixing of Superconductivity and Antiferromagnetism in a High‐Temperature Superconductor.

Cited by 10 publications

References 1 publication

Self-optimized superconductivity attainable by interlayer phase separation at cuprate interfaces

Self-optimized superconductivity attainable by interlayer phase separation at cuprate interfaces

Demonstrating the model nature of the high-temperature superconductorHgBa2CuO4+δ

Atomic-layer engineering of oxide superconductors

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