No image lag photodiode structure in the interline CCD image sensor

Teranishi, Nobukazu; Kohono, A.; Ishihara, Yasuo; Oda, E.; Arai, K.

doi:10.1109/iedm.1982.190285

Cited by 135 publications

(67 citation statements)

References 2 publications

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“…This buried structure consisted in adding a heavily doped p+ thin layer on the top of the n layer of the pn junction making it a vertical p+np structure. This device had also another virtue consisting in an extremely lower dark current compared to pn junctions [20]. The name of PPD has first been given to this structure in a 1984 publication [21] presenting an enhancement of the buried photo diode quantum efficiency through the reduction of the p+ layer thickness.…”

Section: Brief Historical Reviewmentioning

confidence: 99%

“…But the pn junction photodiodes performance was mainly limited by the sampled noise after reset, commonly referred to as the kT C noise and the incomplete charge transfer during the readout [19]. To address these issues, N. Teranishi invented the buried pn junction that was first presented in 1982 [20]. This buried structure consisted in adding a heavily doped p+ thin layer on the top of the n layer of the pn junction making it a vertical p+np structure.…”

Section: Brief Historical Reviewmentioning

confidence: 99%

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Ultra Low Noise CMOS Image Sensors

Boukhayma

2018

Springer Theses

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Section: Brief Historical Reviewmentioning

confidence: 99%

Section: Brief Historical Reviewmentioning

confidence: 99%

Ultra Low Noise CMOS Image Sensors

Boukhayma

2018

Springer Theses

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“…In this structure, the surface under the silicon di-oxide is pinned by holes during the photo signal accumulation to reduce the electron generation by interface states located at Si − SiO 2 interface. This greatly reduces the dark current [5]. Each impurity concentration is elaborately controlled so that accumulated charges in the photodiode are completely removed in the reset operation.…”

Section: Pixel Structure and Operation Principlementioning

confidence: 99%

“…This problem can be solved by using a detector that has a linear and a logarithmic responses for low illumination and high illumination level, respectively [4]. In wide DR image sensors with logarithmic or linear-logarithmic responses, in order to expand the dynamic range to the low illumination level, a pixel structure with pinned photodiode [5] should be employed. The pinned photodiode structure can reduce the dark current significantly, and the reset noise can be canceled by in-pixel charge transfer and correlated double sampling (CDS) at the column readout circuit [6].…”

Section: Introductionmentioning

confidence: 99%

A new active pixel structure with a pinned photodiode for wide dynamic range image sensors

Park

Kawahito

Wakamori

2005

IEICE Electron. Express

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Abstract:A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the conventional linear-log wide DR image sensor with pinned photo diode. Keywords: CMOS image sensor, wide dynamic range, floating gate Classification: Photonics devices, circuits, and systems References[1] M. Sasaki, S. Kawahito, M. Mase, and Y. Tadokoro, "Method to extend dynamic range of CMOS image sensor using different frame-rate readout,"

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“…This model of the system provides an enhanced level of accuracy at the output with less amount of unwanted noise signal. The most effected parameter of this system is the channel resistance which in turn detoriates the overall performance of the system [35][36][37][38][39][40][41][42][43][44][45][46].…”

Section: Design and Implementation Of The Soc Based Smart Cmos Pixmentioning

confidence: 99%

An Innovative Design Approach of SoC Based Smart CMOS Sensor for Mixed Signal Processing based Applications

Tiwari¹

2017

IJET

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Abstract-The CMOS based sensor design technology has evolved with tremendous applications in MSP domain with enhanced characteristic of maximized S/N ratio. This feature has been obtained with the utilization of pixel-based amplification in addition to minimizing the presence of the noise at the output of the device. It means that the noise present in the various active device of the system has been suppressed with the help of SoC based design technique i.e. three level pixel implementation. This system basically supports all the SoC components such as feedback amplifier, buffers, tapered reset device, etc. The CMOS based smart system has both software as well as hardware modules which in turn behave as a complete system on chip (SoC) and has got tremendous use in mixed signal based applications. The main application fo this system is in the computational analysis of the various images captured from the real world. The author present a novel approach of implementing a smart system based on SoC design approach with required performance in the domain of mixed signal processing. The simulation of the system has been carried out on LabVIEW with optimum results desired. Some the result has been carried with mathematical modeling based approach using MatLAB software. The minimum S/N ratio of the system is 55 dB with 1920 X 1080 frame readout at 550 Hz. Keywords: CMOS sensor, HDTV, FPA, CCD, APS, SoC, LabVIEW, MatLAB, PID algorithm, MSP, CCD.I. INTRODUCTION The advent of the sensor dependent image processing technology has come into existence late back to 1970's with the use of MOS devices. The functioning of this system primarily depends on the utilization of array of image sensors which in turns rely on the proper functioning of the array of CCD technology so as to provide better and enhanced quality imaging arrays. With further advancement in this technology i.e. with the availability of CMOS based smart sensors, the analysis of the image becomes quite simple, cost effective, enhanced accuracy of the results. In this system, CMOS readouts with millions pixel capacity are used in addition to the detector arrays with the help of flip chip fabrication technology i.e. the most important feature of a SoC design based system. The above fig 1 shows the schematic arrangement i.e. crossectional view of the CMOS sensing system.The system on chip design based systems are normally follows the Moore's Law which utilized CMOS technology so as to produce higher performance sensors in various range of visibility. Due to this reason, CMOS technology without any doubt has now emerged the most common approach for the design of both infrared and visible range sensors that in turn finds enormous applications in the domain of MSP. Based on this features, it has been found that most of the mixed signal processing based industrial applications are still dependent on CMOS Image Sensors (CIS) technology as compared to CCD approach [2][3][4][5][6][7][8].

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No image lag photodiode structure in the interline CCD image sensor

Cited by 135 publications

References 2 publications

Ultra Low Noise CMOS Image Sensors

Ultra Low Noise CMOS Image Sensors

A new active pixel structure with a pinned photodiode for wide dynamic range image sensors

An Innovative Design Approach of SoC Based Smart CMOS Sensor for Mixed Signal Processing based Applications

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