NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications

Abstract

Normally-off 4H-SiC MOSFETs are used to build NMOS logic gates intended for high temperature operation. The logic gates are characterized between 25°C and 500°C. Stable gate operation for more than 200h at 400°C in air is demonstrated. The excellent MOS reliability is quantified using I-V curves to dielectric breakdown and constant voltage stress to breakdown at 400°C. Although the effective tunneling barrier height B for electrons lowers to 2eV at 400°C, the extrapolated lifetime from constant voltage stress to breakdown measurements is longer than 105h at 400°C for typical logic gate operating field strength of 2MV/cm.

Thermal shock reliability of a GaN die-attach module on DBA substrate with Ti/Ag metallization by using micron/submicron Ag sinter paste

“…1) For instance, traditional Si-based power modules have characteristic switching limits with a range of a few GHz, which makes the devices vulnerable to high thermal environments due to high-power operation. 3) For this reason, wide-bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are emerging in modern transportation equipment industries as the next generation of semiconductors. 4) These WBG semiconductors enable power electronic devices to operate at much higher temperatures (>250 °C) than traditional Si-based power devices (<150 °C), 5,6) because they are theoretically capable of operating at high temperatures above 500 °C at switching frequencies in the range 10-100 GHz and the increased power densities of power modules.…”

“…4) These WBG semiconductors enable power electronic devices to operate at much higher temperatures (>250 °C) than traditional Si-based power devices (<150 °C), 5,6) because they are theoretically capable of operating at high temperatures above 500 °C at switching frequencies in the range 10-100 GHz and the increased power densities of power modules. 3) WBG semiconductors can also ultimately maximize the efficiency of the system by reducing the volume of the cooling system. 7) For operations that can be exposed to high temperature or high power, the interconnecting materials must also be improved to ensure the reliability of WBG semiconductor devices.…”

High Temperature Simulation of 4H-SiC Bipolar Circuits

“…Although some researchers have achieved good results for MOSFETs operating at temperatures above 200 • C, the absence of the gate oxide in a bipolar junction transistor (BJT) makes it a more suitable alternative [6], [7]. Hence, SiC bipolar ICs are the ideal choice for high-temperature, radiation tolerant applications at moderate levels of integration.…”

Investigation of interface state density near conduction band edge of 4H-SiC MOSFET based on inversion capacitance and drain-current characteristics

“…Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been recognized as next-generation power devices [1][2][3][4] and circuit elements that can be used in harsh environments, i.e. high temperatures [5][6][7][8] and high radiative conditions. [9][10][11][12] To design a circuit with SiC devices, a device model is needed.…”