High Temperature Simulation of 4H-SiC Bipolar Circuits

Elgabra, Hazem; Singh, Shakti

doi:10.1109/jeds.2015.2407380

Cited by 12 publications

(5 citation statements)

References 10 publications

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“…Early TTL work demonstrated operation up to 355 °C [8,9] although with low gain from the transistors due to remaining defects from ion implantation being used. However, TTL can work at higher temperatures, as has been shown in simulations [58,59]. In comparison to ECL it will probably use less area and definitely less power.…”

Section: Other Bipolar Resultsmentioning

confidence: 94%

Bipolar integrated circuits in SiC for extreme environment operation

Zetterling

Hallén

Hedayati

et al. 2017

Semicond. Sci. Technol.

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Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

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Section: Other Bipolar Resultsmentioning

confidence: 94%

Bipolar integrated circuits in SiC for extreme environment operation

Zetterling

Hallén

Hedayati

et al. 2017

Semicond. Sci. Technol.

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“…The loading capacity of a circuit is highly dependent on the amount of current required by its input stage (as load), and which can be supported by its output stage (as driver). 30) The amount of current required by TTL and STTL circuits is comparable to the emitter current, whereas in ECL it is comparable to the base current, while the driver of all circuits can support similar amount of current. Therefore, there is a need for bigger output transistors in TTL and STTL circuits to source=sink more currents to=from the load.…”

Section: Design and Optimization Of Bipolar Logic Circuitsmentioning

confidence: 99%

Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications

Elgabra¹,

Siddiqui²,

Singh³

2016

Jpn. J. Appl. Phys.

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Silicon carbide (SiC) is a wide bandgap semiconductor that is inherently capable of operation in unforgiving environments such as high temperatures and radiation. Currently, the control circuitry for SiC based power devices and sensors are silicon based, limiting the overall efficiency of the system in such environments. 4H-SiC integrated circuits, based on different conventional logic technologies, have been investigated in the past using different device structures, by various research groups. This paper presents a thorough investigation of conventional bipolar logic technologies in 4H-SiC simulated across a wide range of temperatures (300–773 K) and power supply voltages (7–17 V). Unlike previous studies, this paper evaluates different technologies using the same device structure in the simulation, to highlight the true merits of each logic technology. The stable performance of all the studied logic technologies in SiC validates the potential of 4H-SiC ICs in small scale logic applications.

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“…1. Circuit diagrams for optimized inverters of conventional technologies (from top to bottom: TTL, STTL, ECL [7]) and the proposed novel technology.…”

Section: Circuit Optimizationmentioning

confidence: 99%

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC

Elgabra

Siddiqui

Singh

2016

MSF

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Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh environment applications due to its superior inherent electrical properties. Though current research is geared towards adapting existing silicon based digital logic technologies to 4H-SiC, the true merit of each technology in 4H-SiC has remained unclear. Creating logic technologies specifically for 4H-SiC, taking into account its electrical properties, is an area which remains unexplored. In this paper, we present a novel bipolar logic technology that is designed and optimized for 4H-SiC, and compare its performance with the prevalent bipolar technologies. The results show that the novel logic technology not only compares well with the conventional technologies in performance, but also features simpler design, smaller footprint, and a low transistor count.

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High Temperature Simulation of 4H-SiC Bipolar Circuits

Cited by 12 publications

References 10 publications

Bipolar integrated circuits in SiC for extreme environment operation

Bipolar integrated circuits in SiC for extreme environment operation

Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC

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