Nitrogenation of various transition metals by N+2-ion implantation

Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4 f XPS core level

“…Prieto et al [26] and Takano et al [17,27] have reported a value of ~22.85eV for the Ta simulations [29,30] for nitrogen implantation in metallic tantalum at beam energies of 0.5, 1, 2, 3 and 5keV, using the same experimental saturation doses as in Fig. 4.…”

“…Furthermore, Takano et al [17,28] have also suggested that the surface adsorption on metals reactive to nitrogen can be enhanced during implantation. …”

“…Ta 2 N forms at lower ion doses and TaN starts to grow at higher ion doses. Finally, for the heaviest nitrogen dose (~5x10 17 atoms/cm 2 ), XRD analysis shows the presence of β-TaN 0.05 , γ-Ta 2 N, δ-TaN and ε-TaN phases. Raole et al [13] have found that β-TaN 0.05 , cubic TaN and hexagonal Ta 5 N 6 phases are formed for low nitrogen ion doses, however, the hexagonal γ-Ta 2 N and TaN phases are only observed for higher ion doses.…”

“…Moreover, alternative techniques like ion beam assisted deposition (IBAD) [1][2][3][4] and nitrogen implantation [12][13][14]16,17], that allow the growth of the film keeping the substrate at low or moderate temperatures, have been also used recently by several groups.…”

Interaction of nitrogen plasmas with tungsten

“…Values as high as 32.8 and 33.2 eV [16], 32.9 eV [17], and 33.0 eV [23] are also given in literature. A relative shift of +0.3 eV is reported in [24] for nitrogen ions implanted into polycrystalline tungsten.…”