Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Chobpattana, Varistha; Son, Junwoo; Law, Jeremy J. M.; Engel‐Herbert, Roman; Huang, Cheng-Ying; Stemmer, Susanne

doi:10.1063/1.4776656

Cited by 79 publications

(63 citation statements)

References 26 publications

(36 reference statements)

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“…• C. For the pretreatments, each TMA cycle consisted of a 40 ms pulse at a pressure of 200 mTorr with Ar carrier gas flow of 100 sccm followed by a 5 s Ar purge, and finally a H 2 gas stabilization step for 10 s. 34,33 Each atomic hydrogen pulse was generated using an Oxford FlexAl plasma source with an ICP forward power of 100 W and consisted of exposure to the plasma for 2 s at a H 2 pressure of 20 mTorr.…”

Section: B Cleaning Studymentioning

confidence: 99%

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Kerr

Chagarov

et al. 2014

The Journal of Chemical Physics

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A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al 2 O 3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

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Section: B Cleaning Studymentioning

confidence: 99%

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Kerr

Chagarov

et al. 2014

The Journal of Chemical Physics

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“…2 In surface channel metal oxide semiconductor (MOS) FET devices, As decapping, wet chemical processing using, for example, HF, HCl, NH 4 OH, [3][4][5] atomic hydrogen treatments, 6,7 as well as sulphur 8,9 and nitrogen passivations 10,11 have all been employed in order to remove native oxides and diminish the interaction between any deposited oxide and the semiconductor. However, while these processes have all shown improvements in device performance, the D it levels are still too high to make the incorporation of a III-V channel a viable alternative to Si in the short term.…”

Section: Introductionmentioning

confidence: 99%

Chemical and electrical characterization of the HfO2/InAlAs interface

Brennan

Galatage

Thomas

et al. 2013

Journal of Applied Physics

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InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC

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“…17 Recently, the surface nitridation technique has been studied as one of the promising methods for obtaining excellent Ga-based III-V surfaces. [18][19][20] It is found that the amount of the Ga-N bonds strongly correlates with D it of the oxide/nitridized-InGaAs interfaces. 18 Since nitridation and oxidation occured simultaneously in ref.…”

Section: Introductionmentioning

confidence: 99%

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

et al. 2017

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A clean and flat GaSb surface without native oxides has been attained by H2 plasma cleaning and subsequent in-situ N2 plasma nitridation process at 300 oC. The mechanisms of thermal desorption behavior of native oxides on GaSb have been studied by thermal desorption spectroscopy (TDS) analysis. The suitable heat treatment process window for preparing a clean GaSb surface is given. Auger electron spectroscopy (AES) analysis indicates that native oxides were completely removed on the GaSb surface after H2 plasma exposure and the pure nitridation of the clean GaSb surface was obtained at a relatively low temperature of 300 °C. This pure nitridation of GaSb have a possibility to be used as a passivation layer for high quality GaSb MOS devices.

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Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Cited by 79 publications

References 26 publications

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Chemical and electrical characterization of the HfO2/InAlAs interface

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

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