GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on 100 mm diameter modified silicon-on-insulator (SOI) wafers incorporating a resistive (111) silicon handle substrate and a lightly doped (100) silicon device layer. In a CMOS-first process, the CMOS was fabricated using the (100) device layer. Subsequently GaN was grown by plasma molecular beam epitaxy in windows on the (111) handle substrate surface without wire growth despite using gallium-rich growth conditions. Transmission lines fabricated on the GaN buffer/SOI wafer exhibited a microwave loss of less than 0.2 dB/mm up to 35 GHz. Direct current measurements on GaN HEMTs yielded a current density of 1.0 A/mm and transconductance of 270 mS/mm. At 10 GHz and a drain bias of 28 V, 1.25 mm long transistors demonstrated a small signal gain of 10.7 dB and a maximum power added efficiency of 53% with a concomitant power of 5.6 W. The silicon and GaN transistors were interconnected to form high yield test interconnect daisy chains and a monolithic current mirror circuit. The CMOS output drain current controlled the GaN transistor quiescent current and consequently the microwave gain.
GaN high electron mobility transistor (HEMT) structures have been grown by plasma molecular beam epitaxy on 100 mm diameter ⟨111⟩ silicon substrates. Crack-free films with thicknesses of up to 1.7 μm were deposited without the use of strain-relaxing buffer layers. X-ray measurements indicate high structural uniformity and the Pendellosung oscillations are observed due to the abruptness of the AlGaN/GaN interface. Capacitance-voltage measurements display a sharp pinch-off with a depleted GaN buffer layer and no measurable charge accumulation at the substrate-epi interface. Transmission line measurements on the GaN HEMT buffer and substrate indicate a loss of less than 0.2 dB/mm up to 20 GHz. An average sheet resistance of 443 Ω/sq with a standard deviation of 0.8% and a mobility of 1600 cm2/V s were obtained for an Al0.25Ga0.75N/GaN HEMT. Transistors were fabricated with a current density of 1.2 A/mm and a transconductance of 290 mS/mm which is quite comparable to GaN HEMTs on SiC.
A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al 2 O 3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).
GaN HEMT structures have been grown on sapphire substrates that exhibit very low absorption loss at 1 μm and low sheet resistance, which are attractive properties for infrared transparent conductors. Initial GaN HEMT/sapphire films showed highly variable absorptions, which were determined to be caused by oxygen outdiffusion from the sapphire substrate into the AlN buffer layer. Growth conditions were modified enabling reproducible growth of low absorption and low sheet resistance material. Absorption losses as low as 0.1% with concomitant film conductivities of 350 Ω/sq or less were demonstrated. Consequently, free carriers in the GaN HEMT channel do not cause significant infrared absorption. The concomitant properties of low absorption and low sheet resistance exceed the properties of transparent conducting oxides. These properties of the GaN HEMT/sapphire structure are also more thermally stable compared to transparent conducting oxides. The low absorption characteristic of the GaN HEMT/sapphire structure is expected to extend into the visible spectrum enabling visible transparent conductor applications as well.
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