Nitrogen ion implanted ultrananocrystalline diamond films: A better electrostatic charge storage medium

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

“…Atomic doping in UNCD is useful for the charge storage medium to trap tribocharges. 27 For this reason, both an increased initial level of tribocharges and a greater duration of the charges of H-UNCD compared to the charge duration of O-UNCD can be achieved.…”

“…25 Both electrical conductance and charge storage characteristics could be affected by atomic doping. 26,27 The charges generated by the friction of two different materials are referred to as tribocharges. The practicability of using harvested tribocharges converted from mechanical energy was demonstrated by Z. L. Wang et al, by making triboelectric nanogenerators (TENGs).…”

“…For this reason, it is important to obtain a comprehensive understanding of the chemistry of the surfaces that are directly relevant to tribocharging properties through atomic force microscopy (AFM), which enables nanometer-scale research. [33][34][35][36][37] Atomic doping has been shown to be a feasible and effective way to improve the electrical properties [38][39][40] and charge trapping properties 27 of UNCD. By utilizing such methods, atomic doping was carried out during deposition process, morphologies, chemical composition, and grain size was also affected.…”