Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

Iwata, K.; Fons, Paul; Yamada, A.; Matsubara, Koji; Niki, Shigeru

doi:10.1016/s0022-0248(99)00613-2

Cited by 162 publications

(75 citation statements)

References 10 publications

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“…While some authors have reported the successful fabrication of a p-type ZnO by either doping with nitrogen 4,5 or codoping with Ga +N, 6,7 many other researchers have failed. [8][9][10][11] There are several probable reasons for such a p-type difficulty; for example, low solubility of dopants, self-compensation by native donor-type defects, deep acceptor levels that make it difficult to be ionized at room temperature, or the formation of an electrically inactive state. Among these factors, defects play a major role because they might not only compensate for the acceptors but also form stable complexes with acceptor dopants and convert them to an electrically inactive state.…”

Section: Introductionmentioning

confidence: 99%

Production and recovery of defects in phosphorus-implanted ZnO

Chen

Kawasuso

et al. 2004

Journal of Applied Physics

132

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Articles you may be interested inReuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Phosphorus ions were implanted in ZnO single crystals with energies of 50-380 keV having total doses of 4.2ϫ 10 13 -4.2ϫ 10 15 cm −2 . Positron annihilation measurements reveal the introduction of vacancy clusters after implantation. These vacancy clusters grow to a larger size after annealing at a temperature of 600°C. Upon further annealing up to a temperature of 1100°C, the vacancy clusters gradually disappear. Raman-scattering measurements reveal the enhancement of the phonon mode at approximately 575 cm −1 after P + implantation, which is induced by the production of oxygen vacancies ͑V O ͒. These oxygen vacancies are annealed out up to a temperature of 700°C accompanying the agglomeration of vacancy clusters. The light emissions of ZnO are suppressed after implantation. This is due to the competing nonradiative recombination centers introduced by implantation. The recovery of the light emission occurs at temperatures above 600°C. The vacancy-type defects detected by positrons might be part of the nonradiative recombination centers. The Hall measurement indicates an n-type conductivity for the P + -implanted ZnO layer, suggesting that phosphorus is an amphoteric dopant.

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Section: Introductionmentioning

confidence: 99%

Production and recovery of defects in phosphorus-implanted ZnO

Chen

Kawasuso

et al. 2004

Journal of Applied Physics

132

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“…[5][6][7][8] In addition to co-doping methods, it has been reported that p-type ZnO thin films can be grown by doping ZnO thin films with As contained in the GaAs substrate or with N, a popular p-type dopant that has been used by many research groups. [9][10][11][12][13] We recently reported on a reproducible and effective route to the production of p-type ZnO thin films with a high hole concentration by sputtering a ZnO target mixed with P 2 O 5 at high temperatures followed by a rapid thermal annealing process.…”

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Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

Hwang

Kim

Lim

et al. 2005

Applied Physics Letters

232

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Phosphorus-doped p-type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.

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“…28 Figure 4 compares its free temperature-dependent Hall carrier concentration plots before and after remote H-plasma treatment. Here, the significant rise in free electron concentration indicates an order of magnitude increase in the number of donors created by hydrogenation.…”

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Remote hydrogen plasma doping of single crystal ZnO

Strzhemechny

Mosbacker

Look

et al. 2004

Applied Physics Letters

125

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We demonstrate that remote plasma hydrogenation can increase electron concentrations in ZnO single crystals by more than an order of magnitude. We investigated the effects of this treatment on Hall concentration and mobility as well as on the bound exciton emission peak I4 for a variety of ZnO single crystals–bulk air annealed, Li doped, and epitaxially grown on sapphire. Hydrogen increases I4 intensity in conducting samples annealed at 500 and 600 °C and partially restores emission in the I4 range for Li-diffused ZnO. Hydrogenation increases carrier concentration significantly for the semi-insulating Li doped and epitaxial thin film samples. These results indicate a strong link between the incorporation of hydrogen, increased donor-bound exciton PL emission, and increased n-type conductivity.

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Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

Cited by 162 publications

References 10 publications

Production and recovery of defects in phosphorus-implanted ZnO

Production and recovery of defects in phosphorus-implanted ZnO

Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

Remote hydrogen plasma doping of single crystal ZnO

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