Nitrogen incorporation into GaAs lattice as a result of the surface cavitation effect

Abstract

Semi-insulating gallium arsenide was exposed to cavitation impact initiated by focusing a high-frequency acoustic wave into liquid nitrogen. Optical and atomic force microscopy methods were used for the analysis of surface morphology. Formation of microstructures as well as change in the chemical composition of the surface are observed. The morphology of the structures is highly dependent on the acoustic parameters. Raman spectroscopy data have confirmed the incorporation of nitrogen atoms into the GaAs lattice and Ga–N bond formation in the region of maximal structural change due to the cavitation impact.

Silicon Substrate Strained and Structured via Cavitation Effect for Photovoltaic and Biomedical Application

“…For cavitation activation, we used a high-frequency system (MHz) with focused energy resonator described elsewhere [ 6 ]. The experimental setup consisted of a reactor vessel and US equipment.…”

“…In our previous work, the suitable condition of the cavitation processing for causing the incorporation of the nitrogen atoms into the GaAs lattice and the formation of an ordered system of (GaN)m(GaAs)n clusters ( m = n = 1) have been successfully established [ 6 , 7 ]. It was also revealed that the characteristic dimension of the peculiarities on the semiconductor surface depended on the exposure parameters and can be controlled (from micron- to nanoscale dimension) by the regulation of the acoustic frequency.…”

Ion-plasma treatment of Cd1 − x Zn x Te (x ∼ 0.04) single crystals and application of antireflection diamond-like carbon films

“…In accordance with the method described in [22], the structures were treated in a cavitating cryogenic liquid in order to test the cohesive properties of the deposited diamond like carbon films. It was found that the coating remains stable against such a treat ment for 10-15 min.…”

The photoresponse of crystalline silicon strained via ultrasonic cavitation processing

“…In the previous work, the suitable cavitation conditions to cause modification of the gallium arsenide surface up to the microscale pattern formation as well as in a change in the chemical composition of semiconductor have been successfully established [12,13]. In this investigation, we use cavitations' impact to introducing mechanical stresses on silicon for its properties engineering.…”

“…For cavitation activation, a high frequency system (1 ÷ 6 MHz) with focused energy resonator described elsewhere [12] was used. Semiconductor target was placed inside the acoustically driven copper cell filled with technical liquid nitrogen, where the megasonic processing was initiated.…”