Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy

Spruytte, S.G.; Larson, M.C.; Wampler, W.R.; Coldren, C.W.; Petersen, H.E.; Harris, James S.

doi:10.1016/s0022-0248(01)00757-6

Cited by 115 publications

(72 citation statements)

References 21 publications

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“…6,12,13 The N content in GaInNAs alloys grown by Kitatani et al using gas source MBE exhibited an inverse dependence upon the growth rate. 14 15 In these dilute nitride-arsenides, for a fixed flux of N, the N content decreases linearly with increasing growth rate. This is the same behaviour as for conventional doping of III-V semiconductors.…”

confidence: 99%

Controlled nitrogen incorporation in GaNSb alloys

et al. 2011

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The incorporation of N in molecular-beam epitaxy of GaNxSb1−x alloys with x ⩽ 0.022 has been investigated as a function of temperature (325–400°C) and growth rate 0.25–1.6 μmh−1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled

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confidence: 99%

Controlled nitrogen incorporation in GaNSb alloys

et al. 2011

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“…Another issue is the concentration of unintentional impurities. We have used SIMS to verify that the impurity concentration (H, O, C and B) is below 1 × 10 17 cm -3 in our MBE-grown materials [48,49]. It is very low compared to nitride-arsenides grown by gas source MBE or MOVPE because of the high purity of all the starting source elements.…”

Section: Ganmentioning

confidence: 99%

“…1. One of most important and unexpected findings was that the atomic N sticking coefficient is near unity, i.e., the group III growth rate (not As flux) controls the N concentration when other growth parameters are held constant [47][48][49]. At substrate temperatures <500 °C, one does not need to control the As 2 flux, other than to keep the surface As stabilized.…”

Section: Ganmentioning

confidence: 99%

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

Harris

Kudrawiec

Yuen

et al. 2007

Physica Status Solidi (b)

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In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2 -1.6 µm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5 -1.6 µm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 µm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper.

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“…1,11,12 The post-growth heating of Ga(In)AsN films is known to improve the luminescence to some extent, 1,12,13 indicating removal of defects, but also to shift the emission peak to shorter wavelengths (a phenomenon called blueshift). A significant number of studies have focused on the amount and nature of N-induced defects in the complex Ga(In)AsN system, [14][15][16][17][18][19][20][21][22][23][24][25] because these defects (nonsubstitutional N atoms or related defects) are considered as the main source for the reduced luminescence intensity and carrier lifetime.…”

Section: Introductionmentioning

confidence: 99%

“…There are experiments which show only a negligible amount of N-induced interstitials, 19 while some other experimental results reveal a much more significant amount of interstitial atoms. 20,24 On the other hand, calculations 14,17,25 have shown that the (N-N) As split interstitial (i.e., N-N dimer substitutes As), (N-As) As split interstitial, As Ga -N As complex (i.e., As antisite plus N As ), and N t Ga interstitial (i.e., N in the center of tetrahedron formed by nearest neighbor Ga atoms) are energetically favored among various defect models. However, the amount of these defects should be negligible under normal growth conditions, because the defects become energetically favored compared to substitutional N only if the position of the Fermi level is close to the conduction band corresponding to heavy n doping.…”

Section: Introductionmentioning

confidence: 99%

Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory

et al. 2012

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Using first-principles total energy calculations we have found complex defects induced by N incorporation in GaAsN. The formation energy of the Ga interstitial atom is very significantly decreased due to local effects within the defect complex. The stability of the Ga interstitials is further increased at surfaces. The present results suggest that the energetically favorable Ga interstitial atoms are much more abundant in GaAsN than the previously considered N defects, which have relatively large formation energies. Our synchrotron radiation core-level photoemission measurements support the computational results. The formation of harmful Ga interstitials should be reduced by incorporating large group IV B atoms in GaAsN.

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Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy

Cited by 115 publications

References 21 publications

Controlled nitrogen incorporation in GaNSb alloys

Controlled nitrogen incorporation in GaNSb alloys

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory

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