Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar∕N2 plasma

Volintiru, I.; Creatore, M.; Helvoort, W. H. van; Linden, J.L.; Sanden, M.C.M. van de

doi:10.1063/1.2221391

Cited by 12 publications

(5 citation statements)

References 28 publications

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“…Also, in the sample grown at T¼270 1C and to some extent in the sample grown at T¼ 310 1C, C and N follow the same trend. This observation indicates that the different impurities (C, N) exist mainly in these ZnO films as the CN complex [6,15]. Furthermore, at growth temperature above the cracking temperature of the DEZn, the increase in C does not influence the concentration of N in the sample, confirming the presence of C under other form than the CN complex in this sample.…”

Section: Resultssupporting

confidence: 71%

Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities

Dangbegnon

Talla

Vines

et al. 2011

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 71%

Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities

Dangbegnon

Talla

Vines

et al. 2011

Journal of Crystal Growth

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“…42,43 In order to at least partially disentangle the effects of ingrain and GB scattering on electron transport in TCOs, a frequent approach consists in measuring the electron mobility in two different ways. 2,25,32,44,45 The Hall measurements describe the mobility of electrons (l Hall ), which are moving across many grains and grain boundaries in the conduction path. l Hall is then limited by both scattering processes within The dotted-dashed line shows fit using the Drude model associated with a x À3 behavior at low frequencies.…”

Section: Generalitiesmentioning

confidence: 99%

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Rey

Ternon

Modreanu

et al. 2013

Journal of Applied Physics

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Polycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 center dot 10(-4)Omega cm (square sheet resistance of 8 Omega/square) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained. (c) 2013 AIP Publishing LLC

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“…[2][3][4] The p-type ZnO fabrication, necessary for ZnO-based optoelectronic devices, has proven to be more difficult obtain due to the native n-type defects and low dopant solubility. 5,6 Several dopants are used to achieve n-type doping in ZnO, the most common being group III elements, such as B, Al, Ga, and In ͑Refs. 7 and 8͒ or F ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

Volintiru

Creatore

Kniknie

et al. 2007

Journal of Applied Physics

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114

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Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance Rs and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (Rs<6 Ω∕□ for a film thickness above 1200 nm) and very rough (>4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (Rs≈100 Ω∕□ for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth.

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Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar∕N2 plasma

Cited by 12 publications

References 28 publications

Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities

Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

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