Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

Xie, Haiting; Wu, Qi; Xu, Ling; Zhang, Lei; Liu, Guochao; Chen, Dong

doi:10.1016/j.apsusc.2016.05.116

Cited by 44 publications

(34 citation statements)

References 18 publications

(21 reference statements)

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“…Sample I had better PBS stability than Sample II. The stability of AOS TFTs could be influenced by the ambient O2 gas during the PBS testing [10,25,32]. The reaction might be described as:…”

Section: Resultsmentioning

confidence: 99%

“…NBS tests might cause a moisture reaction at the back channels of AOS TFTs, which could be described as [25,32,33]:…”

Section: Resultsmentioning

confidence: 99%

“…In our previous study [25], we designed a-IZO/a-IGZO:N TFTs, whose µFE was quite large (49.6 cm 2 ·V −1 ·s −1 ), but VTH was too negative (−2.3 V). In this study, however, Sample II (a-IZO:N/a-IGZO:N TFT) had a positive VTH of 1.5 V, which might result from the fact that N-doping decreased the trap states in a-IZO and at the front channel interface [12,13].…”

Section: Resultsmentioning

confidence: 99%

“…These improvements might result from the hetero-structure channel layers in DSCL devices [21][22][23]. In our recent reports, we obtained the DSCL structure by combining the a-IZO film with a-IGZO:N films, which made the corresponding TFTs exhibit quite a large µFE (49.6 cm 2 ·V −1 ·s −1 ) but too negative threshold voltage (VTH ~−2.3 V) [24,25]. Therefore, further improvement is still necessary.…”

Section: Methodsmentioning

confidence: 99%

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Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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Abstract:The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µ FE = 15.0 cm 2 ·V −1 ·s −1 , SS = 0.5 V/dec, V TH = 1.5 V, I ON /I OFF = 1.1 × 10 8 ) and stability (V TH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

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Section: Resultsmentioning

confidence: 99%

“…NBS tests might cause a moisture reaction at the back channels of AOS TFTs, which could be described as [25,32,33]:…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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“…[4][5][6][7]) and illumination lights (especially the ultraviolet (UV) light) [8,9]. In order to improve the stability of a-IGZO TFTs, many methods have already been tried by the researchers [10][11][12][13][14][15][16]. Especially, Nitrogen-doping (N-doping) was proved to effectively make a-IGZO TFTs more stable [14][15][16], whereas the related physical essence is still not very clear.…”

Section: Introductionmentioning

confidence: 99%

P‐14: Transient Response Properties of Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors

Chen

Tong

Xie

et al. 2018

Symp Digest of Tech Papers

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The transient response properties of nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin film transistors (TFTs) improved first and then became worse with the N 2 flow rate increasing, where the best one occurred at N 2 flow rate=1 sccm. A theoretical model was proposed based on the measurement results of transfer curves and positive bias stresses, indicating that the change of trap states in a-IGZO:N TFTs, rather than the variation of their field-effect mobility, should dominate the transient response properties of devices.

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Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode

Liu

Pan

Zheng

et al. 2023

Adv Materials Technologies

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As amorphous oxide semiconductors (AOSs) are hotly pursued for advanced displays, flexible electronics, optoelectronics, and neuromorphic systems, the AOS Schottky barrier diodes (SBDs) have been tried only using the mainstream amorphous InGaZnO (a‐IGZO) and the conservative bottom‐anode structure. To deepen the study on AOS SBDs, the more challenging top‐anode SBD is developed in this work using a versatile but vulnerable AOS, amorphous InZnO (a‐IZO). Unsurprisingly, the Schottky interface defects are seriously increased by the top‐anode process and the defective a‐IZO, which cannot be effectively passivated using the incumbent oxidizing treatments. The hydrogenation is proposed to considerably suppress these annoying interface defects and thus correspondingly reduces the large leakage current, while the hydrogen doping easily deteriorates a‐IGZO SBD. The underlying mechanism of such distinction is revealed to be the tricky interactions between defect and hydrogen in AOSs. Based on the sophisticated utilization of such defect‐hydrogen interplay, the a‐IZO/a‐IGZO stack is hydrogenated together to simultaneously realize a high‐conductivity bulk and low‐defect interface, noticeably enhancing the performance metrics. Such top‐anode SBD based on hydrogenated multilayer AOSs successfully blazes a novel evolution path for AOS SBDs.

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Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

Cited by 44 publications

References 18 publications

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

P‐14: Transient Response Properties of Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors

Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode

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