Nitrogen-dependent optimum annealing temperature of Ga(As,N)

Influence of Si–N complexes on the electronic properties of GaAsN alloys

“…For GaAsN:Te, annealing leads to higher n and , presumably due to the reduction in N-related free carrier traps, such as N interstitials. [9][10][11][12][13] In case of GaAsN:Si, the annealing-induced reduction in electron trapping is presumably balanced by the enhanced formation of Si-N pairs. Calculations suggest that Si-N complex formation is energetically favorable in the GaAsN:Si system.…”

Characterisation of GaAsN layers grown by MOVPE

“…To the knowledge of the authors, the phase separation induced by the annealing was never reported in recent literature, where the optical activation of GaAs 1Àx N x can occur even at temperature above 850 1C [18]. The result reported in this work is that a small amount of N incorporated to the lattice can segregate by 750 1C annealing, producing grains that emit in the blue region of the spectra, which are tentatively identified as either GaN in cubic phase or GaN 1Àx As x with a low arsenic doping.…”

Thermally activated electron conductivity in Ga(As,N) with N‐induced potential fluctuations

“…• C for 60 s [6]. After RTA, all the samples showed 4-15 times higher photoluminescence intensity; µ increased for all the samples, and n also increased for all the samples except one.…”