Characterisation of GaAsN layers grown by MOVPE

Pelosi, C.; Attolini, G.; Bosi, Matteo; Avella, M.; Calicchio, M.; Musayeva, Nahida; Jiménez, J.

doi:10.1016/j.jcrysgro.2005.10.086

Cited by 4 publications

(3 citation statements)

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“…It may be noted that As also exhibits A 1g mode at 257 cm −1 . 43 Further, Raman studies of dilute GaAs 1−x N x alloys [44][45][46] have shown two mode behaviors in these alloys, exhibiting GaAs-like first order modes below 300 cm −1 , as well as second order modes between 500 and 600 cm −1 along with a GaN-like mode ϳ470 cm −1 . Thus the significantly large scattering intensity below 300 cm −1 seen in all the films deposited below 300°C may be attributed to disorder activated Raman scattering, with contributions from various amorphous phases present in these films.…”

Section: Raman Scattering Studiesmentioning

confidence: 99%

Growth and structure of sputtered gallium nitride films

Yadav¹,

Major²,

Srinivasa³

2007

Journal of Applied Physics

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GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300°C are amorphous and As rich. Above 300°C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700°C, GaN films, practically free of amorphous phase, and As (<0.5at.%) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500°C, the surface diffusion between planes dominates and results in the (101¯1) preferred orientation. Above 500°C, the surface diffusion between grains takes over and results in (0002) preferred orientation.

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Section: Raman Scattering Studiesmentioning

confidence: 99%

Growth and structure of sputtered gallium nitride films

Yadav¹,

Major²,

Srinivasa³

2007

Journal of Applied Physics

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“…Also, PL and photoreflectance spectroscopy (PR) [6] or PL together with HRXRD and transmission electron microscopy (TEM) have been used [5]. Regarding the use of cathodoluminescence (CL) in the study of dilute nitride GaNSbAs properties, plan view studies have been reported [11,12]. However, the high spatial resolution of the CL should allow to achieve cross sectional analysis of the GaNSbAs layer, which to the best of our knowledge has not been previously reported.…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

Navarro

Martı́nez

Galiana

et al. 2018

Journal of Elec Materi

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The effects of ex-situ annealing in N ambient and in-situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy (MBE) were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS did not reveal significant changes, within the error margin, with respect to the as-grown sample. The in-situ annealed in As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.

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“…Usually, this phenomenon is observed in diluted nitride semiconductors [11,12]. However, the optical properties of high-N-content GaAs 1 À x N x and In y Ga 1 À y As 1 À x N x films can be improved by rapid thermal annealing (RTA) [13][14][15].…”

Section: Introductionmentioning

confidence: 99%