Nitride-Based LEDs With Textured Side Walls

Chang, Chin Sung; Chang, Shoou‐Jinn; Su, Yan–Kuin; Lee, C.T.; Lin, Yen-Sheng; Lai, Wei–Chih; Shei, Shih–Chang; Ke, J.C.; Lo, H. M.

doi:10.1109/lpt.2004.823768

Cited by 65 publications

(28 citation statements)

References 15 publications

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“…5, have a larger surface area and a longer undercut length around the mesa-sidewall region in the CSS-LED structure. Chang et al 29 reported that the ICP-etched wavelike side walls mainly enhance the light output in the horizontal directions. The CSS structure has a larger sidewall surface and a better light extraction angle on the mesa sidewall that permits a higher light extraction efficiency.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process

Yang

Lin

Chiang

et al. 2008

Journal of Elec Materi

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InGaN-based light-emitting diodes (LEDs) were fabricated to have a higher light extraction through the photoelectrochemical (PEC) mesa shaping process. After the PEC selective wet oxidation and wet etching processes, stable and controllable crystallographic etching planes were formed as p-type GaN {1011} planes and n-type GaN {1010} planes included at an angle of 27 deg. The ever-present cone-shaped structure of a PEC-treated LED has a larger light scattering area and higher light extraction cones on the mesa sidewall, as analyzed by microphotoluminescence and light output power measurement. This cone-shaped-sidewall LED has a higher light output power and a larger divergence angle compared with a conventional LED measured in an LED chip form

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Section: Resultsmentioning

confidence: 99%

Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process

Yang

Lin

Chiang

et al. 2008

Journal of Elec Materi

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“…GaN-based LEDs have been widely developed in many electronic industries related to full color displays, automobile lights, and other visible and non-visible lights due to a number of advantages such as low power consumption, long duration lifetime, and ecological-friendliness [1][2][3][4][5][6]. Although the LED technology has been remarkably evolved, there are still issues to be resolved for enhancing device performances, such as high joule heating and low light emission efficiency.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

Park¹,

Lee²,

Yang³

et al. 2012

Journal of the Optical Society of Korea

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Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

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“…A similar concept applied to the chip sidewalls could also enhance LED output intensity by the textured chip sidewalls of LEDs. Previously, using an inductively coupled plasma (ICP) etcher or photo electrochemical (PEC) etching process [9,10] could texture LED sidewalls. This research reports a more detailed study on the wet etching mechanism of inverted pyramid sidewalls and describes the characteristic of nitride-based LEDs with textured inverted pyramid sidewalls.…”

Section: Introductionmentioning

confidence: 99%

Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure

Chang

Kuo

2011

Solid-State Electronics

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Nitride-Based LEDs With Textured Side Walls

Cited by 65 publications

References 15 publications

Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process

Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure

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