Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact

Chang, Shoou‐Jinn; Chang, Chin Sung; Su, Yan–Kuin; Chuang, Ricky W.; Lai, Wei Chih; Kuo, Chien-Nan; Hsu, Y.P.; Lin, Yan‐Cheng; Shei, Shih–Chang; Lo, H. M.; Ke, J.C.; Sheu, Jinn-Kong

doi:10.1109/lpt.2004.824667

Cited by 72 publications

(24 citation statements)

References 15 publications

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“…It was found that the 20 mA forward voltages measured from the LEDs with ITO on p-GaN and ITO on n + -SPS contact layers were 6.01 and 3.25 V, respectively. Similar results have also been reported previously [6]. In other words, the operation voltage measured from the LED with ITO on p-GaN cap layer was much higher than that measured from the LED with ITO on n + -SPS contact layer.…”

supporting

confidence: 90%

“…However, it has been shown that ITO can only form Schottky contacts on p-GaN. Very recently, we reported the fabrication of nitride-based ITO LEDs with an n + -short-period superlattice (SPS) tunnel contact layer [6][7][8]. It has been shown that we can simultaneously achieve a reasonably small specific contact resistance and a high upper-contact transmittance by using such a combination.…”

mentioning

confidence: 99%

“…Such a large operation voltage can be attributed to the Schottky contact formed when ITO was deposited directly onto p-GaN. On the other hand, the much smaller operation voltage observed from the LED with ITO on n + -SPS can be attributed to the facts that ITO forms good ohmic contact on nGaN, carriers can tunnel through the n + -p junction and carriers can spread out easily in the in-plane directions [6][7][8].…”

mentioning

confidence: 99%

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Nitride-based LEDs with ITO on nanostructured silicon contact layers

Kuo

Chang

Chen

2005

Journal of Crystal Growth

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confidence: 90%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Nitride-based LEDs with ITO on nanostructured silicon contact layers

Kuo

Chang

Chen

2005

Journal of Crystal Growth

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“…To further harvest the generated light trapped within the GaN, many methods have been proposed to solve this problem [7], including the deposition of p-contact layers with high transmittance [8], the use of patterned sapphire substrates [9] and texturing the surface of the LEDs [10,11]. Generally, surface texturing can be obtained by e-beam lithography, nanoimprint lithography [12,13] and colloidal lithography [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Enhanced light extraction from GaN-based LEDs with a bottom-up assembled photonic crystal

Gong

Cao

et al. 2011

Materials Science and Engineering: B

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“…Through the simulation of electrode shape, it , s found that the electrode structure influences light extraction and optical absorption of the semiconductor. There are many ways to improve the optical and electrical characteristics of LED, such as adopting photonic crystal structure [4] , introducing distributed Bragg reflectors [5] , using short-period-superlattice and an ITO transparent contact [6] , and optimizing electron blocking layer [7] . In this paper, the characteristics of LED are improved by the optimization of electrode shape.…”

mentioning

confidence: 99%

Optimization of electrode shape for high power GaN-based light-emitting diodes

Fan

Cheng

Lin³

et al. 2009

Optoelectron. Lett.

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Because the polarization effect influences the distribution of the carriers in the multiple quantum wells of the light-emitting diodes (LEDs), the light-emitting efficiency is also affected. The influence of the polarization effect on GaN-based LEDs' performance is simulated. By simulating four different types of electrode shapes, it's found that the electrode shape influences not only the photoelectric characteristics but also the optical absorption by the semiconductor. Through the optimization of the electrode shape, the I-V characteristic is improved, and the series resistance is lowered. The optical absorption by the semiconductor is decreased and then the heat generated in the LEDs is lowered. As a result, both the photoelectric conversion efficiency and the stability are improved.GaN-based light emitting-diodes have a variety of applications such as backlighting in flat-panel displays, traffic signals, full-color displays, automotive lighting and the realization of white LED [1,2] . This is due to their many distinctive advantages, such as fast response, long life, small size, low power consumption and high reliability. However, because a GaN-based LED generally grows on the sapphire substrate which is an insulator, we need to etch a mesa on the LED chip in order to get N-contact. The current distribution is not uniform due to the mesa structure, which results in the current crowding effect [3] as shown in Fig.1. And the situation is worse for a high power GaN-based LED with a large mesa area. In addition, the photons generated within the active region can't entirely escape out of the LED. On one hand, the photons can exit from the semiconductor only if their angles of incidence are less than the critical angle. On the other hand, the semiconductor itself will absorb the photons. Through the simulation of electrode shape, it , s found that the electrode structure influences light extraction and optical absorption of the semiconductor. There are many ways to improve the optical and electrical characteristics of LED, such as adopting photonic crystal structure [4] , introducing distributed Bragg reflectors [5] , using short-period-superlattice and an ITO transparent contact [6] , and optimizing electron blocking layer [7] . In this paper, the characteristics of LED are improved by the optimization of electrode shape. Fig.1 The structure and current crowding of the GaNbased LEDMany papers have reported that the optimization of electrode shape can make the current distribution more uniform. For example, J B Zhang et al. [8] used METALAB software to simulate the current distribution of AlGaInP LED and found that the LED with a Wan Zi type electrode possessed more uniform current distribution and higher light extraction efficiency. However, the structure of GaN-based LED is not simple as that of AlGaInP LED, and its mesa structure makes the carriers distribution more complex. In this paper, we use

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Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact

Cited by 72 publications

References 15 publications

Nitride-based LEDs with ITO on nanostructured silicon contact layers

Nitride-based LEDs with ITO on nanostructured silicon contact layers

Enhanced light extraction from GaN-based LEDs with a bottom-up assembled photonic crystal

Optimization of electrode shape for high power GaN-based light-emitting diodes

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