Nitride-based flip-chip ITO LEDs

Chang, Shoou‐Jinn; Chang, Chih-Han; Su, Yan–Kuin; Lee, C.T.; Chen, W.S.; Shen, C.F.; Hsu, Y.P.; Shei, Shih–Chang; Lo, H. M.

doi:10.1109/tadvp.2005.846941

Cited by 86 publications

(32 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is still a great need to improve the internal as well as external quantum efficiency to increase their light output power in order to further drive down the total cost of LED modules. Research into improving the light extraction efficiency and brightness in the LEDs [3][4][5][6][7][8] has been intense. Moreover, high quality GaN-based LEDs have been demonstrated on a micro-scale patterned sapphire substrate (PSS) [7,8], where the micro-scale patterns served as a template for the ELO of GaN and the scattering centers for the guided light.…”

Section: Introductionmentioning

confidence: 99%

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

Huang

Lin²,

Huang

et al. 2009

Materials Science and Engineering: B

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

Huang

Lin²,

Huang

et al. 2009

Materials Science and Engineering: B

View full text Add to dashboard Cite

“…This effect leads to a red-shift of the output spectrum [7]. Typically, these point light sources are assembled together in various sizes of of LED's to produce similar or yet higher light intensity than conventional light sources [8] [9].…”

Section: Introductionmentioning

confidence: 99%

High power LED assemblies for solid state lighting – Thermal analysis

Kudsieh

Bhutta

Raja

2015

Optik

View full text Add to dashboard Cite

“…However, there is still a great need to improve the internal quantum efficiency and external quantum efficiency (EQE) in order to increase the light output power and thus reduce the total cost of LED modules. Research into improving the light extraction efficiency and brightness in LEDs [3]- [8] has been intense. In addition, high-quality GaN-based LEDs are affixed onto a microscale patterned sapphire substrate (PSS) [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

Huang

Lin²,

Huang³

et al. 2009

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-The enhancement of light extraction from GaNbased light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outlinecan package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial lightemitting devices. Index Terms-Gallium nitride (GaN), light-emitting diodes (LEDs), nanoimprint lithography (NIL), photonic quasi-crystal (PQC).

show abstract

Nitride-based flip-chip ITO LEDs

Cited by 86 publications

References 25 publications

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

High power LED assemblies for solid state lighting – Thermal analysis

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

Contact Info

Product

Resources

About