Nitridation of vanadium in molecular nitrogen: a comparison of rapid thermal processing (RTP) and conventional furnace annealing

Galesic, I.; Reusch, U.; Angelkort, C; Lewalter, H.; Berendes, A.; Schweda, E.; Kolbesen, Bernd O.

doi:10.1016/s0042-207x(01)00152-x

Cited by 15 publications

(11 citation statements)

References 6 publications

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“…There are a lot of methods to prepare VN thin films, such as sputtering the VN film from a compound target [9], using reactive pulse laser deposition (PLD) method [10], and reactive magnetron sputtering [11], etc. It was reported that polycrystalline d-VN film can be formed by rapid thermal annealing of V layer in N 2 after annealing at temperature higher than 900°C for 10 s [12]. VN x films can be formed by PLD in N 2 and H 2 ambient and its formation temperature is critical.…”

Section: Introductionmentioning

confidence: 99%

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Zhou

Chen

et al. 2006

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Zhou

Chen

et al. 2006

Microelectronic Engineering

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“…In recent decades, transition metal nitrides (TiN, VN, CrN, etc.) have been prepared from corresponding oxides using ammonia as nitrogen source and reducing agent [22][23][24][25][26][27][28][29]. Ammonia gas is proved to be more effective in the nitridation process than high-purity N 2 gas [30].…”

Section: ) and High Melting Pointmentioning

confidence: 99%

Reduction and Nitridation of Iron/Vanadium Oxides by Ammonia Gas: Mechanism and Preparation of FeV45N Alloy

Liu

Wang

You

et al. 2020

Metals

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The steel micro-alloyed with ferrovanadium nitride has extremely superior properties that make it widely utilized in structural components, construction and aircraft. The conventional methods for synthesizing ferrovanadium nitride include nitridation of pure ferrovanadium alloy or carbothermal nitridation of metallic oxides, using nitrogen or ammonia gas as nitrogen sources. In this study, ferrovanadium nitride (FeV45N) was prepared by direct reduction and nitridation of the corresponding metal oxides with ammonia as the reductant and nitrogen source. This method avoids the introduction of other impurity elements, except the negligible trace elements accompanied with the raw materials. The thermodynamics of the reduction and nitridation process were initially analyzed. During the subsequent ammonia reduction process, the FeV45N powders were successfully obtained at 1273 K for 6 h. The obtained powders were pressed into cylindrical briquettes by hot pressing (HP) at 1473 K for 1 h in vacuum. In the investigation, the X-ray diffraction and morphological analysis of the products was also carried out, and the reaction mechanisms were discussed in detail. The nitrogen content of the final product can reach 11.85 wt. %, and the residual oxygen content can be reduced to 0.25 wt. %. By sintering, the density of the alloy can reach 5.92 g/cm 3 .

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“…However, low‐temperature processing (below 400 °C) is indispensable for realizing AOS TFTs applied to flexible electronic devices and a low thermal budget PDA process is required to ensure the production cost is low. Conventional thermal annealing (CTA), which has been generally adopted for the PDA process is problematic in terms of its high thermal budget because of its time‐consuming method and high processing temperature . In recent years, the microwave PDA (MW‐PDA) technique has attracted much attention as an alternative PDA process because of volumetric heating that directly and uniformly delivers thermal energy to the device.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Amorphous In‐Ga‐Zn‐O Thin Films with Various Compositions Under Microwave Annealing

Shin

2019

Physica Status Solidi (a)

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In this study, the effects of microwave annealing (MWA) on the electrical properties of amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) are evaluated. To measure the transfer and output characteristics of as-deposited, conventional thermal annealed (CTA), or microwave annealed TFTs, the devices are fabricated by varying the compositional ratios of IGZO films (In 2 O 3 :Ga 2 O 3 :ZnO ¼ 1:1:1, 1:1:2, and 2:1:2 at%). The reliability is evaluated by measuring the threshold voltage shift under the gate bias stress and by analyzing the charge trapping characteristics according to the operating temperature. In addition, the interface trap density of the a-IGZO channel/ gate insulator and the volume density of the shallow trap of the channel layer are extracted to evaluate the difference in trap density according to the channel composition and the variation in the trap density as a result of the annealing process. Lastly, the sub-gap density of states (DOS) of the TFTs is investigated to verify the compositional ratio and the annealing effect on the electrical characteristics and reliability of the devices. Based on these results, it is demonstrated that high-performance a-IGZO TFTs can be fabricated by using the low thermal budget MWA technique and by controlling the composition of the IGZO channel.

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Nitridation of vanadium in molecular nitrogen: a comparison of rapid thermal processing (RTP) and conventional furnace annealing

Cited by 15 publications

References 6 publications

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Reduction and Nitridation of Iron/Vanadium Oxides by Ammonia Gas: Mechanism and Preparation of FeV45N Alloy

Characteristics of Amorphous In‐Ga‐Zn‐O Thin Films with Various Compositions Under Microwave Annealing

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