Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy

Ould-Metidji, Y.; Bideux, L.; Bača, D.; Gruzza, B.; Matolín, Vladimı́r

doi:10.1016/s0169-4332(03)00395-7

Cited by 35 publications

(21 citation statements)

References 6 publications

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“…The peaks at the binding energies of 1.1 eV above the bulk peak have been assigned as the Ga 3+ oxidation state. 14 In order to examine the formation of any nitride layers and the structure of the nitrides, the N 1s peak was also evaluated. On the other hand, the peak shift in the spectra ͑d͒ strongly suggests that the nitridation could cause some 3. ͑Color online͒ XPS ͑a͒, ͑b͒ As 3d, ͑c͒, ͑d͒ Ga 2p and ͑e͒, ͑f͒ N 1s spectra of the SiO 2 /InGaAs MOS interfaces ͑a͒, ͑c͒, ͑e͒ with and ͑b͒, ͑d͒, ͑f͒ without nitridation.…”

Section: Impact Of Ingaas Surface Nitridation On Interface Propertiesmentioning

confidence: 99%

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

Hoshii¹,

Yokoyama²,

Yamada³

et al. 2010

Applied Physics Letters

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Section: Impact Of Ingaas Surface Nitridation On Interface Propertiesmentioning

confidence: 99%

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

Hoshii¹,

Yokoyama²,

Yamada³

et al. 2010

Applied Physics Letters

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“…More recently, it has also been reported that cubic zincblende GaN films can be grown by vapor-phase epitaxy on some other substrates with cubic structure, such as GaAs [4] and Si [5]. Moreover, it has been demonstrated that GaN and related compounds could be obtained by nitridation of GaAs (1 0 0) substrates [6][7][8]. On the other hand, oxygen is a common substitutional impurity in GaN crystals.…”

Section: Introductionmentioning

confidence: 99%

Structure and properties of GaNxOy films grown by nitridation of GaAs (100) substrates

Lucas¹,

Fabreguette²,

Linsavanh³

et al. 2004

Journal of Crystal Growth

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“…Furthermore, a peak in low binding energy side is separated into two components. One is As 5/2 -Ga component and the other is As 3/2 -Ga component [4]. The small isolated peak with high binding energy is As-O component [5], which is probably produced by the oxidation of the excess As atoms on the surface after the exposure to the air.…”

Section: Methodsmentioning

confidence: 98%

“…The layer is available not only for the buffer layer for c-GaN growth but also passivating the GaAs surface. Therefore, the mechanism of nitridation of GaAs surface has been studied in several institutes [4][5][6][7][8] but there remain unknown parts. For example, the thickness of the layers has not been precisely determined especially in the early stage of nitridation.…”

mentioning

confidence: 99%

XPS study of nitridation mechanism of GaAs (001) surface by RF‐radical source

Naritsuka

Mori

Takeuchi

et al. 2010

Phys. Status Solidi (c)

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Nitridation mechanism of GaAs (001) surface is studied with systematically changing the nitridation temperature. Consequently, N1s spectrum is found useful to determine the degree of the nitridation. N1s spectrum consists of N‐Ga component and other component (denoted by component A). The N‐Ga component becomes a major component in the samples nitridated at high temperature especially without As supply. The thickness of nitridated layers was also estimated by the concentration of N atoms accumulated at the interface of GaAs/GaN/GaAs multilayers. It was changed from 1.3 to 6.6 ML with changing nitridation temperature from 346 to 571°C. The temperature dependence of the N‐Ga component coincides with the thickness of nitridated layers. This indicates that N atoms bonded with the Ga atoms during the nitridation stayed at the interface and formed a GaN thin layer by growing a GaAs capping layer on it. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy

Cited by 35 publications

References 6 publications

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

Structure and properties of GaNxOy films grown by nitridation of GaAs (100) substrates

XPS study of nitridation mechanism of GaAs (001) surface by RF‐radical source

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