1988
DOI: 10.1063/1.341051
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Niobium-stress influence on Nb/Al-oxide/Nb Josephson junctions

Abstract: Niobium-stress influence on Nb/Al-oxide/Nb trilayer Josephson-junction characteristics is studied. Different junction fabrication techniques are examined such as conventional etching and new lift-off processes. Nb-film stress, relaxed during trilayer etching, can deteriorate junction quality in etching-processed junctions smaller than a few micrometers square. Such deterioration does not occur in lift-off processed junctions even when they are 1 μm square because stress relaxation occurs during trilayer deposi… Show more

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Cited by 58 publications
(16 citation statements)
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“…A bare intrinsic Si wafer is coated with a film of Nb (M1) after stripping the native SiO x with hydrofluoric (HF) acid. Here and below, sputter conditions are tuned to yield films with slight compressive stress [53]; the deposition rate is 45 nm/min. This layer is patterned with an i-line step-andrepeat (stepper) lithography tool and etched with a During the entirety of the fabrication process of the SFQ driver circuit, the area that will support the quantum circuit is left unpatterned and unetched and is protected by the first deposited layer of SiOx.…”
Section: Appendix a Fabrication Detailsmentioning
confidence: 99%
“…A bare intrinsic Si wafer is coated with a film of Nb (M1) after stripping the native SiO x with hydrofluoric (HF) acid. Here and below, sputter conditions are tuned to yield films with slight compressive stress [53]; the deposition rate is 45 nm/min. This layer is patterned with an i-line step-andrepeat (stepper) lithography tool and etched with a During the entirety of the fabrication process of the SFQ driver circuit, the area that will support the quantum circuit is left unpatterned and unetched and is protected by the first deposited layer of SiOx.…”
Section: Appendix a Fabrication Detailsmentioning
confidence: 99%
“…The internal film stresses which result from sputter deposition on to a substrate are well known to affect the properties of devices made from those films 11 . While working pressure, deposition power, operation mode (constant power, voltage, or current bias) and even deposition rate must all be examined in order to obtain optimal conditions, the continual erosion of the magnetron sputtering target over its lifetime requires that these parameters be continually re-examined 12 .…”
Section: Thin Film Stress and Bilayer T Cmentioning
confidence: 99%
“…11 With hexagonal Ti film, the c and a axes are not identical, and their lattice parameters change in opposite directions with varying Ar pressure. c-and a-axis lattice parameters determined from the resulting diffraction peaks of ͑002͒ and ͑114͒ planes in the 2 scans are plotted in Figs.…”
Section: ͓S0003-6951͑98͒04923-7͔mentioning
confidence: 99%