Fabrication and properties of all-refractory Nb/Al–AlOx–Ti junctions for microbolometers and microrefrigerators

Zhao, S. P.; Du, Haifeng; Chen, G. H.; Yang, Qs

doi:10.1063/1.121541

Cited by 6 publications

(4 citation statements)

References 13 publications

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“…13 The background pressure was 1 ϫ10 Ϫ6 Pa. Relatively large single crystal silicon substrates, 16ϫ15ϫ0.5 mm 3 in sizes and suitable for the penetration depth measurements, 12 were used and carefully cleaned before sputter deposition.…”

Section: Methodsmentioning

confidence: 99%

Magnetic penetration depth in Nb/Al and Nb/Cu superconducting proximity bilayers

et al. 2000

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Magnetic penetration depth in Nb/Al and Nb/Cu superconducting bilayers, its absolute values and temperature dependencies under the variations of material and sample parameters are systematically investigated. Measurements of are performed by using the two-coil mutual inductance technique and the results are compared with a recent microscopic theory ͓Phys. Rev. B 59, 14 630 ͑1999͔͒ based upon Eilenberger-Usadel's quasiclassical equations of superconductivity. Our results show that the (T) characteristics at low temperatures usually follow a power law, or a linear temperature dependence, if the sublayer thicknesses are less than several times of their coherence length and the interface resistance is small. A two-gap, steplike feature in the (T) curve of the Nb/Al bilayer system will develop around the sublayer transition temperature of Al when the interface resistance increases or when the Al layer thickness becomes much larger than its coherence length. These results can be well described within the framework of the microscopic theory.

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Section: Methodsmentioning

confidence: 99%

Magnetic penetration depth in Nb/Al and Nb/Cu superconducting proximity bilayers

et al. 2000

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“…Re/Al-AlO x /Re junctions were fabricated using a process similar to the standard SNEP technique. [10][11][12] The Re/Al-AlO x /Re trilayer structures were first deposited by dc magnetron sputtering on clean oxidized silicon chips in an ultrahigh vacuum system having a background pressure of 1×10 −6 Pa. The Ar pressures during sputtering was set to be 2.5 Pa and 1.5 Pa for the Re and Al films, and the deposition rates were 150 nm/min and 10 nm/min, respectively.…”

Section: Fabricationmentioning

confidence: 99%

“…In our previous work, high-quality Nb/Al-AlO x /Nb junctions with sizes down to submicron level have been successfully fabricated [8,9] using the standard selective Nb etching process (SNEP). [10][11][12] In this work, we use the same technique to fabricate Re/Al-AlO x /Re Josephson junctions. We show that the Re material has similar properties in parallel to Nb during sample preparations and high-quality Re/Al-AlO x /Re tunnel junctions can be fabricated conveniently for future applications.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of rhenium Josephson junctions

Xue¹,

Yu²,

Tian³

et al. 2013

Chinese Phys. B

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Rhenium is a superconductor with a relatively weak tendency to oxidize, which is advantageous in superconducting quantum circuit and qubit applications. In this work, Re/Al—AlOx/Re Josephson tunnel junctions were fabricated using a selective film-etching process similar to that developed in Nb trilayer technology. The Re films had a superconducting transition temperature of 4.8 K and a transition width of 0.2 K. The junctions were found to be highly reproducible using the fabrication process and their characteristics had good quality with a low leakage current and showed a superconducting gap of 0.55 meV.

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“…We have tested titanium as a new material for the normalmetal interlayer in SNS JJs. The Ti film can be anodized as in the Nb-Al process [11,12]. Therefore this well-tried technology can be widely used for the preparation of the Nb-Ti-Nb junctions.…”

Section: Introductionmentioning

confidence: 99%

SNS and SIS Josephson junctions with dimensions down to the submicron region prepared by a unified technology

Fritzsch¹,

Elsner²,

Schubert³

et al. 1999

Supercond. Sci. Technol.

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Several applications of Josephson junctions (JJs) in low-temperature superconducting circuits such as programmable voltage standards and SFQ logical circuits or SQUID sensors require JJs with sub-µm dimensions. A method for preparing superconductor-isolator-superconductor (SIS) JJs as well as superconductor-normal metal-superconductor (SNS) JJs was developed which allows the preparation of both types of junctions by nearly the same technological process. Titanium is used as the normal metal for the SNS JJ. Ti can be anodically oxidized and a technology similar to the well-tried Nb-Al technology for SIS JJs can be applied to the SNS system, too. By electron-beam exposure of a negative deep UV photoresist (ma-N 2400) a stable resist mask is generated which has to withstand the following three self-aligned process steps: etching of the Nb counterelectrode by RIE, isolation by anodization and lifting of a SiO planarization layer. By this process SNS (Nb-Ti-Nb) and SIS (Nb-Al/AlOx-Nb) Josephson junctions with smallest junction areas of 0.49 µm2 were prepared and characterized by dc measurements and under the influence of microwave irradiation. The Nb-Ti-Nb junctions have IcRn products of 87 µV. They can be used for programmable Josephson voltage standard circuits at frequencies of 70 GHz.

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Fabrication and properties of all-refractory Nb/Al–AlOx–Ti junctions for microbolometers and microrefrigerators

Cited by 6 publications

References 13 publications

Magnetic penetration depth in Nb/Al and Nb/Cu superconducting proximity bilayers

Magnetic penetration depth in Nb/Al and Nb/Cu superconducting proximity bilayers

Fabrication of rhenium Josephson junctions

SNS and SIS Josephson junctions with dimensions down to the submicron region prepared by a unified technology

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