Fabrication of rhenium Josephson junctions

Xue, Guangming; Yu, Haifeng; Tian, Ye; Liu, Weiyang; Yu, Hongwei; Ren, Yifeng; Shen, Zhenxing

doi:10.1088/1674-1056/22/9/097401

Cited by 4 publications

(3 citation statements)

References 18 publications

(28 reference statements)

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“…Rhenium metal and rhenium nitride barrier layers against Cu diffusion have been studied and found to inhibit Cu/Si interdiffusion and silicide formation effectively . As rhenium has been used for preparation of Re/Al‐Al 2 O 3 /Re Josephson tunnel junctions, it could be of interest in superconducting quantum computing and quantum information applications too. Furthermore, 7 nm thick Re gate contacts in Re/HfO 2 /Si(100) stacked structures have been previously evaluated to prevent oxygen diffusion up to 500 °C in oxygen‐containing atmosphere.…”

Section: Figurementioning

confidence: 99%

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

et al. 2018

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Rhenium is both a refractory metal and a noble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce herein the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over a wide deposition temperature range using fast, simple, and robust surface reactions between rhenium pentachloride and ammonia. Films are grown and characterized for compositions, surface morphologies and roughnesses, crystallinities, and resistivities. Conductive rhenium subnitride films of tunable composition are obtained at deposition temperatures between 275 and 375 °C, whereas pure rhenium metal films grow at 400 °C and above. Even a just 3 nm thick rhenium film is continuous and has a low resistivity of about 90 μΩ cm showing potential for applications for which also other noble metals and refractory metals have been considered.

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Section: Figurementioning

confidence: 99%

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

et al. 2018

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“…The superconducting quantum interference devices (SQUIDs) have been widely used as extremely sensitive magnetic sensors in many fields for decades. [1][2][3][4][5][6][7][8][9] Their performance improvements [10,11] and applications in various interesting new areas such as superconducting quantum computation [12][13][14] have continued to attract much attention today. SQUID magnetometers may operate in two different modes, namely, the flux locked (closed loop) and unlocked modes (open loop).…”

Section: Introductionmentioning

confidence: 99%

Retrieval of original signals for superconducting quantum interference device operating in flux locked mode

Liu¹,

Tian²,

Zhao³

et al. 2015

Chinese Phys. B

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We discuss a simple relation between the input and output signals of a superconducting quantum interference device magnetometer operating in flux locked mode in a cosine curve approximation. According to this relation, an original fast input signal can be easily retrieved from its distorted output response. This technique can be used in some areas such as sensitive and fast detection of magnetic or metallic grains in medicine and food security checking.

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“…[6] Notably,R es hould perform similarly as Co and Ni in HER, but rhenium oxides are even better and as good as Pt, [6] which is considered to be the most effective HER catalyst. [9,10] As rhenium has been used for preparation of Re/Al-Al 2 O 3 /Re Josephson tunnel junctions, [11] it could be of interest in superconducting quantum computing and quantum information applications too.F urthermore,7nm thick Re gate contacts in Re/HfO 2 /Si(100) stacked structures have been previously evaluated [12] to prevent oxygen diffusion up to 500 8 8Ci no xygen-containing atmosphere.F or the electrode applications in metal-oxidesemiconductor field-effect transistors (MOSFETs) and various capacitors Re could be an interesting alternative to ruthenium as they have nearly identical work functions (Re 4.72 eV and Ru 4.71 eV). [7] Microwave resonators have been made using epitaxial Re on sapphire.…”

mentioning

confidence: 99%

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

et al. 2018

View full text Add to dashboard Cite

Rhenium is both ar efractory metal and an oble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce herein the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over awide deposition temperature range using fast, simple,a nd robust surface reactions between rhenium pentachloride and ammonia. Films are grown and characterized for compositions, surface morphologies and roughnesses,c rystallinities,a nd resistivities.C onductive rhenium subnitride films of tunable composition are obtained at deposition temperatures between 275 and 375 8 8C, whereas pure rhenium metal films growa t 400 8 8Ca nd above. Even aj ust 3nmt hickr henium film is continuous and has al ow resistivity of about 90 mW cm showing potential for applications for whicha lso other noble metals and refractory metals have been considered.

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Fabrication of rhenium Josephson junctions

Cited by 4 publications

References 18 publications

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

Retrieval of original signals for superconducting quantum interference device operating in flux locked mode

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

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