NiGe Thin Films for Write-Once Blue Laser Media

Ou, Sin-Liang; Chen, Sheng-Chi; Lin, Yan-Cheng; Wang, Chong-Sian; Kuo, T.Y.

doi:10.1109/tmag.2013.2295033

Cited by 3 publications

(3 citation statements)

References 13 publications

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“…It can be reasonably suggested that the large grains formed in the 450 °C-annealed Ge/GeCu film all belonged to a cubic Ge phase. It is worth mentioning that these large grains with unique geometrical shapes do not appear in the Ge/Au [ 7 ], Ni/Ge [ 8 ], GeCu [ 9 ], Ge/Cu [ 10 ], NiGe [ 11 ], or Ge/NiGe [ 12 ] films, implying that the layered structure of Ge/GeCu is beneficial for the formation of these grains.…”

Section: Resultsmentioning

confidence: 99%

“…As a result, when the MIC method was used, a relatively low crystallization temperature (<400 °C) would usually be achieved. Up to now, various Ge-containing recording films, such as Ge/Au [ 7 ], Ni/Ge [ 8 ], GeCu [ 9 ], Ge/Cu [ 10 ], NiGe [ 11 ], and Ge/NiGe [ 12 ] were deposited as the recording layers of write-once blu-ray discs (BD-Rs).…”

Section: Introductionmentioning

confidence: 99%

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Recording Characteristics, Microstructure, and Crystallization Kinetics of Ge/GeCu Recording Film Used for Write-Once Blu-Ray Disc

Lai

Wang

et al. 2016

Materials

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A Ge67Cu33 (16 nm) layer and a Ge (3 nm)/Ge67Cu33 (16 nm) bilayer were grown by sputtering at room temperature and used as the recording films for write-once blue laser media. In comparison to the crystallization temperature of Ge in a GeCu film (380.7 °C–405.1 °C), the crystallization temperature of Ge in a Ge/GeCu bilayer could be further decreased to 333.7 °C–382.8 °C. The activation energies of Ge crystallization were 3.51 eV ± 0.05 eV and 1.50 eV ± 0.04 eV for the GeCu and the Ge/GeCu films, respectively, indicating that the Ge/GeCu bilayer possesses a higher feasibility in high-speed optical recording applications. Moreover, the lower activation energy would lead to a larger grain size of Ge crystallization in the Ge/GeCu bilayer after the annealing process. Between the as-deposited and the annealed states, the optical contrasts (@ 405 nm) of the GeCu and the Ge/GeCu films were 26.0% and 47.5%, respectively. This reveals that the Ge/GeCu bilayer is more suitable for the recording film of a write-once blu-ray disc (BD-R) in comparison with the GeCu film. Based on the dynamic tests performed for 2× and 4× recording speeds, the optimum jitter values of the BD-R with the Ge/GeCu recording film were 7.4% at 6.3 mW and 7.6% at 8.6 mW, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recording Characteristics, Microstructure, and Crystallization Kinetics of Ge/GeCu Recording Film Used for Write-Once Blu-Ray Disc

Lai

Wang

et al. 2016

Materials

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“…This was however accelerated by the revelation that when exposed to a laser pulse, metal alloys along the GeTe-Sb 2 Te 3 pseudo-binary line exhibits a very large optical contrast and a very fast switching speed between an amorphous state with low reflectivity and a crystalline state with high reflectivity. [146][147][148][149] This finding has led to the application of PCMs on optical storage disks including DVD-RAM, [150][151][152][153] DVD-R/W, [154][155][156][157] and recent Blu-Ray disks, [158][159][160][161] and it has triggered the emergence of a new memory device using PCMs, so called PCRAM. It should be noted that most of the PCMs used today are chalcogenidebased alloys that contain chalgogenide elements (O, S, Se, Te, Po) in Group VI of the periodic table.…”

Section: Phase-change Materialsmentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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Recording Characteristics and Crystallization Behavior of Ge/GeCu Bilayer Applied for Write-Once Blu-Ray Media

Lai

Wang

et al. 2016

2016 International Symposium on Computer, Consumer and Control (IS3C)

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NiGe Thin Films for Write-Once Blue Laser Media

Cited by 3 publications

References 13 publications

Recording Characteristics, Microstructure, and Crystallization Kinetics of Ge/GeCu Recording Film Used for Write-Once Blu-Ray Disc

Recording Characteristics, Microstructure, and Crystallization Kinetics of Ge/GeCu Recording Film Used for Write-Once Blu-Ray Disc

Physical principles and current status of emerging non-volatile solid state memories

Recording Characteristics and Crystallization Behavior of Ge/GeCu Bilayer Applied for Write-Once Blu-Ray Media

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