Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field

Kaiju, Hideo; Ono, Akito; Kawaguchi, Nobuyoshi; Kondo, Kenji; Ishibashi, Akira; Won, Jonghan; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko

doi:10.1016/j.apsusc.2008.10.036

Cited by 10 publications

(7 citation statements)

References 26 publications

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“…Interfacial diffusion and the structure of the Ni films grown on Si by DC plasma sputtering deposition as a function of deposition time were also reported by H. Qiu . H. Kaiju et al . deposited Ni films on polyethylene naphtalate substrates using thermal evaporation and investigated the variation of surface morphology and interfacial structure of the Ni thin films with film thickness.…”

Section: Introductionmentioning

confidence: 61%

“…Ni thin films are widely used as thermal‐sensitive units in flow speed sensors, high‐frequency power sensors and temperature‐sensitive sensors due to their high temperature coefficient of resistivity (TCR) . It was reported that the properties of Ni films are generally thickness dependent . Hence, a full understanding of the correlation between film properties and film thickness is important to the correct design of the devices using Ni films as sensing units.…”

Section: Introductionmentioning

confidence: 99%

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Thickness dependence of the structural, mechanical and electrical properties of Ni films deposited on polyimide by ion beam‐assisted deposition (IBAD)

Shao

2012

Surface & Interface Analysis

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Ni thin films with different thicknesses were deposited on pre-treated polyimide substrates by ion beam-assisted deposition. Dependence of structural, mechanical and electrical properties of the Ni films on their thickness was investigated. The results showed a clear correlation between film properties and film thickness. The inter-diffusion at the interface regions of the films with different deposition time were demonstrated by transmission electron microscopy and X-ray photoelectron spectroscopy. With increasing film thickness, surface roughness of the Ni films firstly decreased and then increased, while the grain size gradually increased. Residual stress of the Ni thin films decreased with increasing Ni film thickness up to 202 nm and then slightly increased as the film thickness further increased. Resistivity decreased, and temperature coefficient of resistivity (TCR) increased with increasing film thickness due to the enhancement of crystallization degree and the increase in grain size. The decrease in surface roughness and residual stress also contributed to the decrease of resistivity and the increase of TCR of the films. An optimal film thickness is suggested, which yielded a relatively high TCR value and low levels of both surface roughness and residual stress.

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Section: Introductionmentioning

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Thickness dependence of the structural, mechanical and electrical properties of Ni films deposited on polyimide by ion beam‐assisted deposition (IBAD)

Shao

2012

Surface & Interface Analysis

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“…At present, weak magnetic fields are mainly applied during the preparation process of Ni films. For example, a magnetic flux density of 360 Oe was used in the evaporation process of Ni films, leading to a decrease in the surface roughness and particle size of the films . A 0.3 T magnetic field, which was applied during electroless plating of the Ni films, effectively and simultaneously improved the magnetic ordering structure, saturation magnetization and coercivity of the films .…”

Section: Introductionmentioning

confidence: 99%

Effect of High Magnetic Field on the Growth, Magnetic, and Electrical Properties of Nanocrystalline Ni Films with Different Thicknesses and Growth Rates

et al. 2018

Physica Status Solidi (a)

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To realize the application of Ni films in magnetic recording media, giant magnetoresistive sensors and microelectromechanical systems, it is necessary to control and improve the magnetic and electrical properties of the films. In this paper, Ni nanocrystalline films with different thicknesses and growth rates are prepared with or without a high magnetic field (HMF). The effects of a HMF on the growth, magnetic and electrical properties of the Ni films are studied. The results show that HMF changes the growth structure of the Ni films from disordered stacked grains to columnar growth along the direction of the HMF. The columnar growth becomes more prominent at a high growth rate and large film thickness. The HMF increases the grain size but decreases the surface roughness of the Ni films. Due to changes in the growth structure, grain size and film quality, the saturation magnetization of the Ni films increase markedly (by 89%), and the resistivity and coercivity significantly decrease (by 89 and 58%, respectively) by the HMF. The remanence ratio of the Ni films is controlled by the HMF. This study shows that a HMF effectively controls the growth and improves the magnetic and electrical properties of Ni films.

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“…In this chapter, we present structural and electrical properties of Ni/polyethylene naphthalate (PEN) films used as electrodes in QC devices (Kaiju et al, 2009 and current-voltage (I-V) characteristics for three types of QC devices. The three types of QC devices are as follows: (i) Ni/Ni QC devices (17 nm linewidth, 17×17 nm 2 junction area), in which two Ni thin films are directly contacted with their edges crossed (Kondo et al, 2009;, (ii) Ni/NiO/Ni QC devices (24 nm linewidth, 24×24 nm 2 junction area), in which NiO thin insulators are sandwiched between two Ni thin-film edges and (iii) Ni/poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61butyric acid methyl ester (PCBM)/Ni QC devices (16 nm linewidth, 16×16 nm 2 junction area), in which P3HT:PCBM organic molecules are sandwiched between two Ni thin-film edges Kondo et al, 2010).…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Nanofabrication Techniques and Applications

Cui¹

2011

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Recent Advances in Nanofabrication Techniques and ApplicationsRecent Advances in Nanofabrication Techniques and Applications Electron Beam Lithography for Fine Dot Arrays with Nanometer-Sized Dot and Pitch 9 EB-drawing system [7]I have already reported key technologies which enable ultrahigh packing over 1 Tb/in 2 : (1) the use of an EB drawing system with a fine probe and large probe current, (2) the thinning of the resist to prevent the spread of incident electron scattering in the resist, and (3) the design of a highly packed pattern with a hexagonal or centered rectangular lattice structure to avoid the proximity effect (Fig. 3. 1). The EB drawing system consists of a HR-SEM (JSM6500F, JEOL, Ltd.) and a writing controller (Tokyo Technology Co., Ltd.) (Fig. 3. 2). The drawing was done on a resist coating on a piece of Si placed on the XY table, which was not moved during the EB writing. This type system is very suitable for checking the limit of the drawing pattern size, because the stage position error can be neglected. The system provides a high probe current of 2 nA at a resolution of 2 nm. We used the system under a probe current of 100 pA and an acceleration voltage of 30 kV. In the drawing, the address resolutions were 10 nm and 2.5 nm for ZEP520 and calixarene [14, 15] resists, respectively. Development was carried out using the commercial developers ZED-N50 (MIBK+IPA) and ZEP-RD (xylene) for 210 sec and 180 sec for ZEP520 and calixarene, respectively. In particular, we adjusted the focus to get the fine probe on the sample surface at a magnification of 250k-200k. In order to achieve 1-Tb/in 2 storage patterned media, we carried out experiments to confirm whether EB writing can form very fine pit or dot arrays with a pitch of <60 nm or not. At first, we coated the resist on a piece of Si substrate with a thickness of 70 nm and 15 nm in ZEP520 and calixarene, respectively. After pre-baking, we drew ultrahigh-packed pit and dot patterns with a pitch of 20-60 nm. After developing and rinsing the resists, we checked the drawn patterns using the same HR-SEM. Thinning allows not only to prevent electron scattering extension in the resist, but also to avoid electron charging. We determined the minimum thickness at which there is sufficient contrast and no damage to the resist during SEM observation. The thickness of 70 nm in ZEP520 resist was decided by electron damage and contrast signal in SEM. I could not obtain the high magnitude SEM image in a thickness range of less than 70 nm.Recent Advances in Nanofabrication Techniques and Applications 10 3.2 EB drawing [7, 13] 3.2.1 Using ZEP520 positive EB resist Figure 3.3 shows SEM images of ZEP520 pit patterns drawn at an exposure dosage of around 180 C/cm 2 . The figure shows that the minimum pit arrays were drawn with a minimum pit diameter of <20 nm at a pitch of 40 nm x 60 nm [13]. We could not form higherpacked pit patterns than this. Furthermore, the pit size drastically changed, with a fluctuation of about 18 nm in this pitch arrays pattern and about 11 ...

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Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field

Cited by 10 publications

References 26 publications

Thickness dependence of the structural, mechanical and electrical properties of Ni films deposited on polyimide by ion beam‐assisted deposition (IBAD)

Thickness dependence of the structural, mechanical and electrical properties of Ni films deposited on polyimide by ion beam‐assisted deposition (IBAD)

Effect of High Magnetic Field on the Growth, Magnetic, and Electrical Properties of Nanocrystalline Ni Films with Different Thicknesses and Growth Rates

Recent Advances in Nanofabrication Techniques and Applications

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