Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

Yu, L. S.; Qiao, D.; Qian, Xing; Lau, S. S.; Boutros, K. S.; Redwing, Joan M.

doi:10.1063/1.121767

Cited by 96 publications

(39 citation statements)

References 12 publications

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“…Therefore, the surface state influenced the Ohmic and Schottky contacts. Recently, researchers have examined various surface processing experiments to control and optimize the surface state of AlGaN [13][14][15][16][17]. In this study, samples that were annealed at various temperatures were investigated to correlate changes in surface physical properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

Chen

Tseng

Lin

2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

Chen

Tseng

Lin

2009

Journal of Crystal Growth

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“…In order to improve the performance of these devices, it is important to investigate the parameters of metal contacts to AlGaN/GaN heterojunctions. Recently, significant reports were available about AlGaN Schottky characteristics using gold [4][5][6], nickel [5][6][7][8][9], titanium [5,[7][8][9], silver [5], palladium [5,9], iridium [10,11], platinum [12][13][14], rhenium [15], tantalum nitride [16] and copper [17]. Experimental results obtained on AlGaN layers indicate that the Schottky barrier height U B varies with the metal work function U M [5,6].…”

Section: Introductionmentioning

confidence: 96%

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Guhel

Boudart²,

Delos³

et al. 2006

Microelectronics Reliability

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“…High-quality Schottky barriers to n-type AlGaN are important for the efficient operation of ultraviolet photodetectors or heterostructure field-effect transistors (HFETs). [1][2][3][4] Several publications report the barrier height for Schottky contacts to n-AlGaN, [5][6][7][8][9][10][11][12][13] including three studies of the influence of the Al mole fraction on the barrier height, 8,11,12 where the increase in Al mole fraction (x Ͻ 0.35) provides higher Schottky barriers over those of pure n-GaN. Other more recent publications report on the thermal stability of Schottky barriers for gate metallizations on HFETs.…”

Section: Introductionmentioning

confidence: 98%

Environmental sensitivity of Au diodes on n-AlGaN

Readinger

Mohney

2005

Journal of Elec Materi

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With growing interest in AlGaN for ultraviolet detectors and high-power/hightemperature electronic devices, the problem of forming high-quality Schottky contacts to this semiconductor has become increasingly important. It was shown that wet-chemical surface pretreatments affect the as-deposited diode characteristics for Au/n-AlGaN Schottky diodes. However, these diodes improve over the course of days when exposed to air at room temperature, exhibiting reduced leakage currents, enhanced barrier heights, and reduced ideality factors. Exposure to oxygen, with an enhanced effect in the presence of water vapor, is responsible for the environmental aging. The environmental aging was found to occur regardless of the source of AlGaN, surface preparation, and metal deposition technique. It was determined that high asdeposited reverse currents were due to current transport beneath the contact area, rather than across the semiconductor surface. Two findings further suggested that the change in electrical characteristics was due to a phenomenon occurring at the metal/semiconductor interface. First, metal thickness played a key role in the rate of change of the electrical characteristics, with thicker contacts being more impervious to surrounding gas species at room temperature. Second, a metal that readily forms an oxide, Ni, exhibited little environmental aging, while noble metals, such as Au and Pt, showed dramatic effects. Mild anneals revealed that the environmental change was partially reversible, which suggests the passivation of electrically active defects at the metal/semiconductor interface as the cause of the altered diode behavior. Taken together, the data indicate that oxidizing species diffuse through noble metal contacts to the metal/semiconductor interface and passivate electrically active defects, which may be reactivated upon mild anneals in N 2 .

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Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

Cited by 96 publications

References 12 publications

Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Environmental sensitivity of Au diodes on n-AlGaN

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