2004
DOI: 10.1109/tadvp.2004.831890
|View full text |Cite
|
Sign up to set email alerts
|

Next-Generation Microvia and Global Wiring Technologies for SOP

Abstract: As microsystems continue to move toward higher speed and microminiaturization, the demand for interconnection density both on the IC and the package levels increases tremendously. The 2002 ITRS roadmap update identifies the need for sub-100-m area array pitch and data rates of 10 Gb/s in the package or board by the year 2010, requiring much finer lines and vias than the current microvias of 50 m diameter and lines and spaces of 25 m. After a brief description of the future need for high-density substrates, the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
32
0

Year Published

2004
2004
2015
2015

Publication Types

Select...
6
2
1

Relationship

1
8

Authors

Journals

citations
Cited by 39 publications
(32 citation statements)
references
References 23 publications
(15 reference statements)
0
32
0
Order By: Relevance
“…Microvia filling by copper electroplating has been an important process technology in the fabrication of high density interconnections (HDI) of printed circuit boards (PCBs) and IC packaging substrates [1][2][3][4][5][6][7][8][9]. The progress mode of copper electrodeposition in the microvia must be bottom-up in order to ensure a void-free filling.…”
Section: Introductionmentioning
confidence: 99%
“…Microvia filling by copper electroplating has been an important process technology in the fabrication of high density interconnections (HDI) of printed circuit boards (PCBs) and IC packaging substrates [1][2][3][4][5][6][7][8][9]. The progress mode of copper electrodeposition in the microvia must be bottom-up in order to ensure a void-free filling.…”
Section: Introductionmentioning
confidence: 99%
“…2 Recently, glass interposers (GIs) have been attracting increased interest because of their lower cost and certain performance advantages. [3][4][5][6][7] Due to its lower thermal conductivity compared to Si, it is even more important to fill holes in glass with Cu to improve heat dissipation, and it would be desirable to do so by less cumbersome means than used for TSVs. W.P.…”
mentioning
confidence: 99%
“…The recently released 2003 ITRS roadmap [15] calls for package signal speeds and flip chip pad pitch to satisfy 50 nm node requirements for future ICs. There have been significant developments in microvia and high-density build-up substrates and the state-of-the-art manufacturing processes use line and space technology and 50-75 microvias [16]- [20]. Several low loss and low k polymers including epoxy, A-PPE, Avatrel, BCB, polyimide, and LCP have been evaluated at the PRC for signal speed and loss at frequencies up to 20 GHz.…”
Section: A High Speed Wiring and Dieletricsmentioning
confidence: 99%
“…Embedded high-k polymer/ceramic nanocomposite capacitors (dielectric constant [15][16][17][18][19][20] have been used primarily for the decoupling applications as discussed earlier. Currently, a capacitance density has been reported with a thin film of using hydrothermal synthesis [37] that can be integrated with the SOP.…”
Section: E Capacitorsmentioning
confidence: 99%