Next-generation, high-efficiency III-V multijunction solar cells

King, Richard R.; Karam, N.H.; Ermer, J.; Haddad, N.; Colter, P. C.; Isshiki, T.; Yoon, Hyoseok; Cotal, H.; Joslin, David; Krut, D.D.; Sudharsanan, R.; Edmondson, K.; Cavicchi, B.T.; Lillington, D.R.

doi:10.1109/pvsc.2000.916054

Cited by 60 publications

(28 citation statements)

References 12 publications

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“…We observed that the performance and results produced from this virtually fabricated MJ model, is very similar to those published in King et al (2000) as well as in many other papers (Karam et al 1999;Lillington et al 2000). The results are also comparable to experimental data of similar manufactured cells.…”

Section: Validation Of Results With Experimental Datasupporting

confidence: 88%

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

Singh¹,

Sarkar

2011

Opt Quant Electron

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An effective BSF is a key structural element for an efficient solar cell, either in a multi-junction or in a single-junction device. In this paper, two important materials AlGaAs and InAlGaP with their varied thickness (i.e. 0.05-1.0) μm both for top BSF and bottom BSF cells are investigated using the computational numerical modeling TCAD tool Silvaco ATLAS. It has been found that under the current matching condition with the relatively thinner (30 nm) top BSF layer and the thicker (1,000 nm) bottom BSF layer, the cell exhibit an overall enhancement of short-circuit current density J sc and open circuit voltage Voc thereby improving the overall efficiency of the cell. A wide band gap material In 0.5 (Al 0.7 Ga 0.3 ) 0.5 P is proved to be a better choice for both window and BSF layer by increasing 6.2% more efficiency than using other widely used Al 0.7 Ga 0.3 As material under the same cell configuration because of its high photo generation rate. For this optimized cell structure, the maximum J sc = 16.10 mA/cm 2 , V oc = 2.392 V, and fill factor = 87.52% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 32.1964% (1 sun) and 36.6781% (1,000 suns). This work reports the Influence of different BSF material and structures on the characteristics and efficiency of Multi-Junction solar cells. The detail photo-generation rates and EQE in this optimized ARC less DJ solar cell structure are also observed. The major stages of the modeling are explained and the simulation results are validated with published experimental data to demonstrate the accuracy of our results produced by the model utilizing this technique.

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Section: Validation Of Results With Experimental Datasupporting

confidence: 88%

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

Singh¹,

Sarkar

2011

Opt Quant Electron

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“…A detailed paper introducing this Novel modeling technique has been previously presented [2].The performance and results produced from the virtually fabricated MJ model, are very similar to those published in [3] as well as in many other papers [4][5][6][7]. The results are also comparable to experimental data of similarly manufactured cells, Figures 3 & 4. Minor differences are only due to the variations in the material and optical parameters used.…”

Section: Introductionsupporting

confidence: 75%

Genetic Algorithm application for the optimization of solid state devices using a novel modeling technique

Michael

2008

2008 16th Mediterranean Conference on Control and Automation

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Abstract-A new method for developing a realistic physical model of any type of solid state device is presented. Application to model advanced multi-junction solar cells; Thermo-photovoltaics; sensors; as well as other novel solid state devices are introduced in this presentation. The primary goal of multijunction solar cell design is to maximize the output power for a given solar spectrum. The construction of multijunction cells places the individual junction layers in series, thereby limiting the overall output current to that of the junction layer producing the lowest current. The solution to optimizing a multijunction design involves both the design of individual junction layers which produce an optimum output power and the design of a series-stacked configuration of these junction layers which yields the highest possible overall output current. This paper demonstrates the use of Genetic Algorithm in a two-part process to refine a given multijunction solar cell design for near-optimal output power for a desired light spectrum. This approach can similarly be utilized to optimize the parameters of any Solid state device to yield any desired performance.

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“…The GaAs middle subcell in an InGaP/GaAs/Ge 3J cell limits the overall photocurrent (i.e., has the smallest photocurrent among the three subcells) and therefore an increase of the InGaP top subcell bandgap by adding Al and increasing Al content in the AlInGaP quaternary would improve the efficiency. However addition of Al induces a significant reduction of the photocurrent of the InGaP cell probably due to the adverse effect of Al and the associated oxygen contamination on minority-carrier properties [47]. Lowering the bandgap of the current-limiting GaAs middle subcell by substituting a portion of the Ga content with In is another approach for higher efficiency than the InGaP/GaAs/Ge 3J cell, although this approach accompanies lattice mismatch and requires graded buffer layers or suffers from large density of dislocations otherwise [27,48].…”

Section: 0 Ev Bandgap Subcellsmentioning

confidence: 99%

“…A bonded GaAs/In 0.53 Ga 0. 47 As monolithic 2J cell with a lattice mismatch of 4% has been prepared, indicating potential for an InGaP/GaAs/InGaAsP/InGaAs 4J cell, as depicted in Figure 11, through bonding of an InGaP/GaAs 2J subcell and an InP-based 1eV-InGaAsP/0.73eV-InGaAs 2J subcell with the 4% lattice mismatch [60]. As a strategy to lower manufacturing costs by reusing expensive III-V semiconductor compound substrates, Ge/Si and InP/Si alternative growth substrates fabricated through wafer bonding and layer transfer of Ge and InP thin films onto Si substrates and growth of InGaP/GaAs 2J and InGaAs 1J cells on each with comparable cell efficiencies relative to cells grown on bulk Ge and InP substrates, respectively, have been demonstrated [61,62].…”

Section: 0 Ev Bandgap Subcellsmentioning

confidence: 99%

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Tanabe

2009

Energies

151

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Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (Al)InGaP/(In)GaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

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Next-generation, high-efficiency III-V multijunction solar cells

Cited by 60 publications

References 12 publications

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

Genetic Algorithm application for the optimization of solid state devices using a novel modeling technique

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

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