Next-generation all-silica coatings for UV applications

Melninkaitis, Andrius; Grinevičiūtė, Lina; Abromavičius, Giedrius; Mažulė, Lina; Smalakys, Linas; Pupka, Egidijus; Ščiuka, Mindaugas; Buzelis, Rytis; Kičas, Simonas

doi:10.1117/12.2280517

Cited by 7 publications

(6 citation statements)

References 21 publications

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“…In all cases, the densities of GLAD films are essentially lower than the density of the normally deposited film-2.4 (g/cm 3 ) [19]. Basing on the relationship between film density and refractive index [28], the value of refractive index in the case of GLAD films is estimated as 1.3, which is close to the published experimental value [29]. Table 1.…”

Section: Subst Dimenssupporting

confidence: 77%

Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

2019

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The high-energy glancing angle deposition of silicon dioxide films with alternation of deposition angle is studied using classical atomistic simulation. Both slow and fast alternations are investigated. The growth of vertical tree-like columns and chevron-like regular structures is demonstrated under fast and slow alternations, respectively. Due to high porosity, the density of the deposited silicon dioxide films is reduced to 1.3 ÷ 1.4 g/cm3. This results in reduction of the refractive index to 1.3, which agrees with known experimental data. For slow continuous substrate rotation, formation of a helical structure is demonstrated.

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Section: Subst Dimenssupporting

confidence: 77%

Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

2019

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“…As can be seen in the plots in Figures 5 and 6, an increase in the deposition angle from α = 60 • to α = 70 • leads to a significant reduction in the film density. This result is consistent with the experiments [33] and results of previous simulations [34].…”

Section: Resultssupporting

confidence: 93%

Silicon Dioxide Thin Films Deposited Using Oxide Targets: Results of Atomistic Simulation

Grigoriev,

Sulimov,

Tikhonravov

2024

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An atomistic simulation of silicon dioxide thin films deposited using oxide targets is performed. The influence of the oxide target on the deposition process is taken into account by introducing O=Si=O molecules into the flow of particles moving from the target to the substrate. The fraction of these molecules varied from 0 to 50%. It was found that the presence of O=Si=O molecules leads to film densification during a normal deposition. With a low-energy deposition, the increase in density was twice as high as with a high-energy deposition. The absolute value of the compressive stress increased with an increasing fraction of O=Si=O molecules in the flow of deposited particles at a normal, high-energy deposition. The influence of O=Si=O molecules on the structure of the glancing angle deposited films depends on the deposition angle.

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“…The films with low refractive index, n = 1.32 (α =70 • ), were characterized by low values of both stress tensor components. Values of the refractive index for large deposition angles were in the interval of the experimental results for SiO 2 GLAD films [31].…”

mentioning

confidence: 69%

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Grigoriev¹,

Сулимов²,

Tikhonravov³

2020

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Dependence of stress values in silicon dioxide films on its thickness in the initial stage of film growth was investigated using atomistic molecular dynamics simulation. It was shown that the stress in normally deposited films was compressive and varied slightly with growth of film thickness. The stress in the glancing angle deposited films was several times lower than the stress in the normally deposited films, and varied from compressive stress to tensile stress with increasing film thickness. An essential anisotropy of stress tensor components was revealed for the case of glancing angle deposition. The calculated stress values were in the interval of experimental data.

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Next-generation all-silica coatings for UV applications

Cited by 7 publications

References 21 publications

Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

Silicon Dioxide Thin Films Deposited Using Oxide Targets: Results of Atomistic Simulation

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

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