2002
DOI: 10.1088/0268-1242/17/12/306
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New ways of developing glass/conducting glass/CdS/CdTe/metal thin-film solar cells based on a new model

Abstract: Making use of the authors' experimental results and the evidence available in the literature, an alternative model for glass/conducting glass/CdS/CdTe/metal solar cells has been formulated. This model explains the device behaviour in terms of a combination of a hetero-junction and a large Schottky barrier at the CdTe/metal interface. The main experimental observations available to date are described and compared with the currently assumed p-n junction model and this proposed new model. It is shown that the pro… Show more

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Cited by 72 publications
(68 citation statements)
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References 28 publications
(30 reference statements)
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“…This was first published in 2002, and the relevant energy band diagram is shown in Fig. 8b [7]. Clearly the two device concepts produced another controversy in the solid state physics area of this device.…”
Section: Cds/cdte Device Issuesmentioning
confidence: 99%
See 3 more Smart Citations
“…This was first published in 2002, and the relevant energy band diagram is shown in Fig. 8b [7]. Clearly the two device concepts produced another controversy in the solid state physics area of this device.…”
Section: Cds/cdte Device Issuesmentioning
confidence: 99%
“…Clearly the two device concepts produced another controversy in the solid state physics area of this device. Many experimental results could be explained by both device structures, but the second device model satisfactorily explains almost all device characteristics [7]. This situation had created confusion in understanding and describing properties of CdS/ CdTe based PV device characteristics for a long period of time over three decades.…”
Section: Cds/cdte Device Issuesmentioning
confidence: 99%
See 2 more Smart Citations
“…However, cathodic voltages closer to the intrinsic voltage (V i ) would be favourable for the fabrication of devices due to high crystallinity, better optical and morphological properties achieved in stoichiometric or near-stoichiometric CdTe layers. It should be noted that based on the understanding as published by Dharmadasa et al (2002) [21,30,31] and new results as published by independent researchers such as Reese et al (2015) [23] and Burst et al (2016) [22], fabricating devices with slightly Cd-rich CdTe is favourable due to increased carrier lifetime, defect reduction amongst other advantages.…”
Section: Resistivitymentioning
confidence: 99%