New vanadium based Ba3MV4O15 (M=Ti and Zr) high Q ceramics for LTCC applications

Suresh, E. K.; Unnimaya, A. N.; Surjith, A.; Ratheesh, R.

doi:10.1016/j.ceramint.2012.10.192

Cited by 35 publications

(8 citation statements)

References 24 publications

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“…reported that Ba 2 V 2 O 7 ceramics sintered at 900°C for 10 h which are having ε r of 10.1, Q × f of 51 630 GHz and τ f of −26.5 ppm/°C . Our group also reported low‐temperature sinterable Ba 3 MV 4 O 15 (M = Ti and Zr) ceramics system for LTCC applications . These ceramics sintered at 800°C for 2 h exhibit excellent microwave dielectric properties and chemical compatibility with Ag and Al electrodes.…”

Section: Introductionmentioning

confidence: 79%

Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba₃V₄O₁₃ Ceramics

2014

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Ultralow‐temperature sinterable Ba3V4O13 ceramics have been prepared through solid‐state ceramic route. Structural properties of the ceramic material are studied using powder X‐ray diffraction. Ba3V4O13 ceramic has monoclinic structure and the existence of [V4O13]6− polyhedra is confirmed through Laser Raman studies. The sample sintered at 600°C for 1 h shows dense microstructure with microwave dielectric properties of εr = 9.6, Q × f = 56 100 GHz, and τf = −42 ppm/°C. The ceramics under study show good chemical compatibility with aluminum during cofiring.

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Section: Introductionmentioning

confidence: 79%

Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba₃V₄O₁₃ Ceramics

2014

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“…Table 3 lists the performance of reported vanadium-based ceramics. 16,17,[19][20][21][22][23]35,36 All the previously researched ceramics possessed low ST (<961°C), offering the possibility of utilizing LTCC technology. In comparison with other ceramics, SrZnV 2 O 7 ceramic possessed a competitive Qf value to ensure its frequency selectivity and a relatively small negative τ f value to be adjusted in future work.…”

Section: Resultsmentioning

confidence: 99%

SrZnV₂O₇: A low‐firing microwave dielectric ceramic with high‐quality factor

Chen

Zhang

et al. 2021

J Am Ceram Soc

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The explosive advances in modern communication have provoked huge requirements for microwave devices with superior performance. To satisfy the criteria for device fabrication, microwave dielectric ceramics should own a proper dielectric constant (ε r ), a high-quality factor (Qf), and a nearzero temperature coefficient of resonant frequency (τ f ). [1][2][3] Recently, low-temperature co-fired ceramic (LTCC) technology has gained considerable attention for it can effectively lessen the volume of components, allowing for realizing miniaturization, integration, and modularization of devices. In LTCC, ceramics need to be co-fired with metal electrodes (e.g., Ag), which requires a low sintering temperature (ST) (<961°C, the melting point of Ag) and chemical compatibility with electrodes. [4][5][6] There are numerous ceramic systems developed with desirable properties, such as MgO-

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“…Recently extensive efforts were made in V 2 O 5 -based compounds to identify novel microwave dielectric ceramic systems suitable for LTCC substrate applications since they possess low or even ultra-low sintering temperature and excellent microwave dielectric properties [3][4][5][6][7]. According to CaO-V 2 O 5 phase diagram, the melting point of CaV 2 O 6 is about 775°C [8].…”

Section: Introductionmentioning

confidence: 99%

Microwave dielectric properties of CaV2O6 ceramics with low dielectric loss

Yao

Chen

et al. 2015

J Mater Sci: Mater Electron

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Novel glass-free low temperature firing microwave dielectric ceramics CaV 2 O 6 with high Q was prepared through a conventional solid-state reaction method. The crystal phase and microstructures were studied by XRD and SEM. Orientation degree of CaV 2 O 6 ceramics increased with an increase of sintering temperature. The Qxf values of CaV 2 O 6 ceramics were strongly correlated with the densification and orientation degree. Typically, the CaV 2 O 6 ceramics sintered at 675°C possessed excellent microwave dielectric properties: e r = 10.2, Qxf = 123,000 GHz (at 10.2 GHz) and s f = -60 ppm/°C.

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New vanadium based Ba3MV4O15 (M=Ti and Zr) high Q ceramics for LTCC applications

Cited by 35 publications

References 24 publications

Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba₃V₄O₁₃ Ceramics

Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba₃V₄O₁₃ Ceramics

SrZnV₂O₇: A low‐firing microwave dielectric ceramic with high‐quality factor

Microwave dielectric properties of CaV2O6 ceramics with low dielectric loss

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New vanadium based Ba3MV4O15 (M=Ti and Zr) high Q ceramics for LTCC applications

Cited by 35 publications

References 24 publications

Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba3V4O13 Ceramics

Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba3V4O13 Ceramics

SrZnV2O7: A low‐firing microwave dielectric ceramic with high‐quality factor

Microwave dielectric properties of CaV2O6 ceramics with low dielectric loss

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Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba₃V₄O₁₃ Ceramics

Microwave Dielectric Properties of Ultralow‐Temperature Cofirable Ba₃V₄O₁₃ Ceramics

SrZnV₂O₇: A low‐firing microwave dielectric ceramic with high‐quality factor