New valence control and spin control method in GaN and AlN by codoping and transition atom doping

Ferromagnetic properties of (Ga,Mn)N nanowires grown by a chemical vapor deposition method

“…It was proposed that the ferromagnetic properties might be due to the solid solution of ͑Ga,Mn͒N, 4,7 while the secondary phases such as Ga-Mn and Mn-N compounds could be origin of ferromagnetism. 3 A number of competing theoretical models [8][9][10] for ͑Ga,Mn͒N including the mean-field Zener model 5 were also developed. Despite a number of works mentioned above, however no works on origin of ferromagnetic properties in nanosized DMS's were investigated.…”

A brief review of co-doping

“…Doping and band-gap engineering of wide bandgap ZnO encounter difficulties similar to those encountered for TiO 2 and GaN. Similar to the ADA complex model for GaN [3,139], the strategy of partially compensated co-doping of Ga, N, and P has been proposed in band-gap engineering of ZnO nanowires [145]. Firstprinciples calculations showed a redshift of the optical absorption spectrum for the co-doped case compared with N mono-doped ZnO, as well as lower defect formation energy, both of which indicate enhanced photoactivity in the partially compensated co-doping scheme [145].…”

“…Group III-nitride semiconductors have attracted significant attention for applications in opto-electronic devices owing to their tunable and direct band-gap, and obtaining low-resistivity p-type GaN is one of the critical issues in the utilization of GaN-based opto-electronic devices [3,5,28,139,140]. Similar to TiO 2 , there is a natural doping limit for GaN, owing to its low-lying VB [100].…”

“…Attempts have been made to improve hole concentrations and conductivities of p-type GaN. In 2001, KatayamaYoshida et al proposed that formation of the acceptordonor-acceptor (ADA) complex by co-doping donors and acceptors in GaN would increase the p-type conductivity [3,139]. Although a single acceptor and single donor are used in this co-doping model, the unbalanced dopant numbers guarantees the partially compensated nature.…”

“…Later, Yamamoto et al conducted first-principles calculations and showed that this effect should be attributed to the formation of the N S -In Zn -N S complex, which transforms the localized impurity level of N into a delocalized state [147]. Therefore, the enhanced ptype conductivity can be explained by the ADA complex model [3,139].…”