1975
DOI: 10.1063/1.88311
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New type of homointegrated and heterointegrated circuits

Abstract: The use of GeO2 as a stable mask for the selective growth of epitaxial Ge layers through unmasked windows on Ge substrates or on previously deposited Ge layers in GaAs substrates is here described. In both cases, the Ge epitaxial layers have been grown at a relatively low temperature, 330–420 °C, using the GeI2 disproportionation reaction. The surfaces of the oxide and the Ge layers grown in regions surrounded by GeO2 appear to be mirror smooth when observed with a scanning electron microscope up to 11 500× ma… Show more

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Cited by 4 publications
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