Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1−xGex/Si(100) grown by gas-source molecular beam epitaxy

Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

“…In our model, both cases are assigned the same ⌬E͑311͒. 3, 4 The capability of the model to reproduce the ͕111͖ to ͕311͖ transition makes it apt for the simulation of Si 1−x Ge x , where this feature is commonly observed, 3,4 although in this case, a recalibration of the parameters is needed for the particular conditions and Ge concentration used. This agrees with SEG observations made at 1150°C where only ͕111͖ planes were present.…”