2000
DOI: 10.1016/s0040-6090(99)01114-1
|View full text |Cite
|
Sign up to set email alerts
|

Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1−xGex/Si(100) grown by gas-source molecular beam epitaxy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2005
2005
2020
2020

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 13 publications
0
1
0
Order By: Relevance
“…In our model, both cases are assigned the same ⌬E͑311͒. 3, 4 The capability of the model to reproduce the ͕111͖ to ͕311͖ transition makes it apt for the simulation of Si 1−x Ge x , where this feature is commonly observed, 3,4 although in this case, a recalibration of the parameters is needed for the particular conditions and Ge concentration used. This agrees with SEG observations made at 1150°C where only ͕111͖ planes were present.…”
mentioning
confidence: 99%
“…In our model, both cases are assigned the same ⌬E͑311͒. 3, 4 The capability of the model to reproduce the ͕111͖ to ͕311͖ transition makes it apt for the simulation of Si 1−x Ge x , where this feature is commonly observed, 3,4 although in this case, a recalibration of the parameters is needed for the particular conditions and Ge concentration used. This agrees with SEG observations made at 1150°C where only ͕111͖ planes were present.…”
mentioning
confidence: 99%