New technologies used for the 1 THz backward-wave oscillator

Garcin, P.; Grauleau, D.; Gerber, Robert A.; Teyssier, Loïc

doi:10.1109/iedm.1988.32944

Cited by 5 publications

(7 citation statements)

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“…In summation, our comparative study not only sheds light on the impressive performance of the Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW Schottky barrier IMPATT source but also underscores its significant advantages over existing THz sources [1][2][3][4][5][6][7][8][9][10][11]. The amalgamation of superior THz power delivery, enhanced conversion efficiency, and low operational voltage requirements solidifies its standing as a pioneering and dependable THz source, poised to drive the evolution of THz technology and its diverse applications.…”

Section: Comparison With Other Thz Sourcesmentioning

confidence: 72%

“…In this section, we present a comprehensive comparative analysis that juxtaposes various commercially available state-of-the-art THz oscillators, all operating at approximately 1.0 THz, with our proposed THz IMPATT sources based on the AlGaN/GaN/AlGaN MQW architecture. To facilitate a clear comparison, we have graphically depicted the THz power output of these sources as a function of frequency in Figure 11 [1][2][3][4][5][6][7][8][9][10][11]27]. The key specifications, including the frequency range of operation, Peak THz power output, and DC to THz conversion efficiency of established state-of-the-art THz sources, such as the carcinotron, folded waveguide source, backward wave oscillators (BWOs), quantum cascade lasers (QCLs), high electron mobility transistors (HEMTs), planar Schottky barrier diode multipliers, and harmonic oscillator arrays are listed in a tabular format in Ref.…”

Section: Comparison With Other Thz Sourcesmentioning

confidence: 99%

“…Among the various THz sources that have demonstrated substantial potential, several state-of-the-art devices have emerged. These include the carcinotron, folded waveguide sources, backward wave oscillators (BWOs), quantum cascade lasers (QCLs), high electron mobility transistors (HEMTs), planar Schottky barrier diode multipliers, and harmonic oscillator arrays [1][2][3][4][5][6][7][8][9][10][11]. These sources have found utility across a wide spectrum of applications, showcasing the versatility and promise of THz technology [12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, we benchmark the performance of our proposed structures against that of state-of-the-art THz sources [1][2][3][4][5][6][7][8][9][10][11], providing insights into their relative capabilities. In conclusion, we observe that the Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW Schottky barrier IMPATT source surpasses all other potential THz sources in terms of THz power delivery and DC to THz conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

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Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation

Ghosh,

Deb,

Ghosh

et al. 2024

Preprint

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In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN material system, with a fixed Aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier diode structures, are investigated for their THz potential. To enhance reverse breakdown characteristics, we employ mesa etching and nitrogen ion-implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise, improving overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and applications.

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Section: Comparison With Other Thz Sourcesmentioning

confidence: 72%

Section: Comparison With Other Thz Sourcesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation

Ghosh,

Deb,

Ghosh

et al. 2024

Preprint

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“…The dimensions of the structure are optimized for operation in the terahertz range, and can be found in [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Submillimeter wave antenna With slow wave feed line

Zhurbenko

Krozer

Kotiranta

et al. 2009

2009 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)

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-Submillimeter wave radiation, which is also referred to as terahertz radiation, has not been extensively explored until recently due to a lack of reliable components and devices in this frequency range. Current advances in technology have made it possible to explore this portion of the electromagnetic spectrum, and to create innovative imaging and sensing techniques that hold enormous potential in biomedical, metrological and security applications. Considering that realization of submillimeter wave components and antennas is still heavily constrained by problems arising from technological limitations and the necessity of having extremely miniaturized circuit elements, the design process remains quite challenging. In this paper, a design of a submillimeter wave antenna fed by a slow wave structure is described. The antenna is useful in high-power THz applications because of its ability to directly radiate energy from a vane-type interaction structure of a vacuum electron device. The parameters of the antenna are optimized while taking the technological constraints into account. highly directive antenna is described. The parametric analysis of the antenna is performed in order to optimize its radiation characteristics. II. FE ED LI NEThe surface electromagnetic wave is guided by a copper vane-type slow wave structure shown in Figure I. The antenna is fed by this slow wave structure. This structure is optimized for electron tube operation and has a groove for electron beam propagation. The electromagnetic wave is localized near the vane, as it is shown in Figure I.

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Traveling-Wave Thermionic Devices

Wilson¹

1995

Handbook of Microwave Technology

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New technologies used for the 1 THz backward-wave oscillator

Cited by 5 publications

References 0 publications

Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation

Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation

Submillimeter wave antenna With slow wave feed line

Traveling-Wave Thermionic Devices

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